CSD87312Q3E

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Lead Free :

Contains Lead

Drain to Source Voltage (Vdss) :

30V

Thickness :

900μm

Turn-Off Delay Time :

17 ns

Turn On Delay Time :

7.8 ns

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

45A

Continuous Drain Current (ID) :

27A

Package / Case :

8-PowerTDFN

JESD-609 Code :

e4

ECCN Code :

EAR99

Number of Pins :

8

Factory Lead Time :

6 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Element Configuration :

Dual

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

2.5W

Transistor Element Material :

SILICON

Number of Elements :

2

Feedback Cap-Max (Crss) :

16 pF

Number of Terminations :

7

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Pbfree Code :

yes

Base Part Number :

CSD87312

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Contact Plating :

Gold

Packaging :

Cut Tape (CT)

Terminal Form :

NO LEAD

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 15V

Mounting Type :

Surface Mount

Series :

NexFET™

Length :

3.3mm

FET Type :

2 N-Channel (Dual) Common Source

Rise Time :

16ns

Width :

3.3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Fall Time (Typ) :

2.8 ns

Rds On (Max) @ Id, Vgs :

33m Ω @ 7A , 8V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Power Dissipation :

2.5W

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

10V

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 4.5V

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE