CSD86360Q5D
- Mfr.Part #
- CSD86360Q5D
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerLDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 25V 50A 8SON
- Stock
- 2
- In Stock :
- 2
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- NO LEAD
- Vgs(th) (Max) @ Id :
- 2.1V @ 250μA
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Terminal Finish :
- Matte Tin (Sn)
- Length :
- 5mm
- Continuous Drain Current (ID) :
- 50A
- Reach Compliance Code :
- not_compliant
- Number of Functions :
- 1
- Supply Current-Max (Isup) :
- 50mA
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- FET Feature :
- Logic Level Gate
- Base Part Number :
- CSD86360
- Contact Plating :
- Gold
- Rise Time :
- 14.8ns
- Number of Terminations :
- 8
- Number of Pins :
- 8
- Series :
- NexFET™
- Switcher Configuration :
- Buck
- Thickness :
- 1.5mm
- Width :
- 6mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Switching Frequency-Max :
- 1500kHz
- Analog IC - Other Type :
- SWITCHING REGULATOR
- Input Voltage-Nom :
- 12V
- Package / Case :
- 8-PowerLDFN
- Max Power Dissipation :
- 13W
- Drain to Source Voltage (Vdss) :
- 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 12.6nC @ 4.5V
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 6.6 ns
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- 25V
- Mount :
- Surface Mount
- Number of Channels :
- 2
- Factory Lead Time :
- 6 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- FET Type :
- 2 N-Channel (Half Bridge)
- Turn-Off Delay Time :
- 29.3 ns
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Height :
- 1.5mm
- Lead Free :
- Contains Lead
- Gate to Source Voltage (Vgs) :
- 10V
- Drain to Source Resistance :
- 3.7mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 2060pF @ 12.5
- Turn On Delay Time :
- 9.5 ns
- Datasheets
- CSD86360Q5D

CSD86360Q5D datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at
CSD86360Q5D Description
The CSD86360Q5D NexFET powered power module is optimized for synchronous buck applications, providing high current, high efficiency and high frequency capability in a small form factor of 5 mm ?á 6 mm. Optimized for 5V gate driver applications, the product provides a flexible solution that provides high-density power when used in conjunction with any 5V gate driver of an external controller / driver.
CSD86360Q5D Features
1? Half-Bridge Power Block
? 91% System Efficiency at 25 A
? Up to 50-A Operation
? High-Frequency Operation (Up to 1.5 MHz)
? High-Density SON 5-mm ?á 6-mm Footprint
? Optimized for 5-V Gate Drive
? Low-Switching Losses
? Ultra-Low-Inductance Package
? RoHS Compliant
? Halogen Free
? Lead-Free Terminal Plating
CSD86360Q5D Applications
? Synchronous Buck Converters
¨C High-Frequency Applications
¨C High-Current, Low Duty Cycle Applications
? Multiphase Synchronous Buck Converters
? POL DC-DC Converters
? IMVP, VRM, and VRD Applications
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