BSL316CL6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Surface Mount :

yes

Reach Compliance Code :

Compliant

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Power - Max :

500mW

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

94pF @ 15V

FET Feature :

Logic Level Gate

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

30V

Manufacturer :

Infineon Technologies AG

Current - Continuous Drain (Id) @ 25°C :

1.4A, 1.5A

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30 V

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

PG-TSOP6-6

Feedback Cap-Max (Crss) :

7 pF

Package :

Bulk

Rds On (Max) @ Id, Vgs :

160mOhm @ 1.4A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Pin Count :

6

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 5V

ECCN Code :

EAR99

Subcategory :

Other Transistors

HTS Code :

8541.21.00.95

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

1.5 A

Package Shape :

RECTANGULAR

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-G6

Number of Elements :

2

Operating Temperature :

-55°C ~ 150°C (TJ)

Series :

OptiMOS™

Vgs(th) (Max) @ Id :

2V @ 3.7µA

Pbfree Code :

yes

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.16 Ω

Number of Terminals :

6

Product Status :

Active

Power Dissipation-Max (Abs) :

0.5 W

FET Type :

N and P-Channel