BSL308CL6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2V @ 11μA

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Reference Standard :

AEC-Q101

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

2.3A

Gate Charge (Qg) (Max) @ Vgs :

500nC @ 10V

Continuous Drain Current (ID) :

2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G6

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ECCN Code :

EAR99

Terminal Position :

Dual

Radiation Hardening :

No

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

DS Breakdown Voltage-Min :

30V

Number of Elements :

2

Pbfree Code :

yes

Additional Feature :

AVALANCHE RATED

Max Power Dissipation :

500mW

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

275pF @ 15V

Rds On (Max) @ Id, Vgs :

80m Ω @ 2A, 10V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Published :

2011

Operating Temperature :

-55°C~150°C TJ

Package / Case :

SOT-23-6 Thin, TSOT-23-6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss) :

17 pF

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

2.3A 2A

Drain-source On Resistance-Max :

0.057Ohm

FET Type :

N and P-Channel