BSL303SPEH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Published :

2013

Vgs(th) (Max) @ Id :

2V @ 30μA

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

30 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1401pF @ 15V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Halogen Free :

Halogen Free

Gate Charge (Qg) (Max) @ Vgs :

20.9nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PDSO-G6

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

30V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

6.3A Ta

Mount :

Surface Mount

Max Dual Supply Voltage :

-30V

Reference Standard :

AEC-Q101

Power Dissipation-Max :

2W Ta

Series :

OptiMOS™

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

33m Ω @ 6.3A, 10V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

6.3A

Terminal Position :

Dual

Number of Elements :

1

Number of Terminations :

6

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

25.2A

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.033Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Pbfree Code :

yes