BSL307SP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.043Ohm

Package / Case :

SOT-23-6 Thin, TSOT-23-6

DS Breakdown Voltage-Min :

30V

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

Vgs(th) (Max) @ Id :

2V @ 40µA

Power Dissipation-Max :

2W Ta

Series :

OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds :

805pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

22A

Qualification Status :

Not Qualified

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

5.5A Ta

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

5.5A

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

44 mJ

Vgs (Max) :

±20V

HTS Code :

8541.29.00.95

Published :

2001

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pin Count :

6

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G6

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

43m Ω @ 5.5A, 10V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON