BSL306NL6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Published :

2011

Additional Feature :

AVALANCHE RATED

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.057Ohm

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

275pF @ 15V

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

OptiMOS™

Continuous Drain Current (ID) :

2.3A

Rise Time :

2.3ns

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

1.6nC @ 5V

Turn-Off Delay Time :

8.3 ns

Pin Count :

6

DS Breakdown Voltage-Min :

30V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual)

Gate to Source Voltage (Vgs) :

20V

Max Power Dissipation :

500mW

Base Part Number :

BSL306

Fall Time (Typ) :

1.4 ns

Feedback Cap-Max (Crss) :

17 pF

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

57m Ω @ 2.3A, 10V

Turn On Delay Time :

4.4 ns

Vgs(th) (Max) @ Id :

2V @ 11μA

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Pbfree Code :

yes

ECCN Code :

EAR99

Number of Terminations :

6

Package / Case :

SOT-23-6 Thin, TSOT-23-6