BSL306NL6327HTSA1
- Mfr.Part #
- BSL306NL6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 2.3A 6TSOP
- Stock
- 35,789
- In Stock :
- 35,789
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Series :
- OptiMOS™
- Feedback Cap-Max (Crss) :
- 17 pF
- Rise Time :
- 2.3ns
- Vgs(th) (Max) @ Id :
- 2V @ 11μA
- Number of Pins :
- 6
- RoHS Status :
- RoHS Compliant
- Continuous Drain Current (ID) :
- 2.3A
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 57m Ω @ 2.3A, 10V
- Fall Time (Typ) :
- 1.4 ns
- Base Part Number :
- BSL306
- Max Power Dissipation :
- 500mW
- Input Capacitance (Ciss) (Max) @ Vds :
- 275pF @ 15V
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 1.6nC @ 5V
- Turn-Off Delay Time :
- 8.3 ns
- Drain-source On Resistance-Max :
- 0.057Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- DS Breakdown Voltage-Min :
- 30V
- FET Type :
- 2 N-Channel (Dual)
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Number of Terminations :
- 6
- Pin Count :
- 6
- Number of Elements :
- 2
- FET Feature :
- Logic Level Gate
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Gate to Source Voltage (Vgs) :
- 20V
- Additional Feature :
- AVALANCHE RATED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss) :
- 30V
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 4.4 ns
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2011
- Radiation Hardening :
- No
- Datasheets
- BSL306NL6327HTSA1

BSL306NL6327HTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at
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