BDX33B-S
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- Mfr.Part #
- BDX33B-S
- Manufacturer
- Bourns, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 10A TO220
- Stock
- 14,828
- In Stock ：
- 14,828
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- Manufacturer :
- Bourns, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tube
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Polarity :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 10A
- Transistor Type :
- NPN - Darlington
- Current - Collector Cutoff (Max) :
- 10mA
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 80V
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 2.5V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 6mA, 3A
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 80V
- Max Power Dissipation :
- 2W
- Collector Emitter Breakdown Voltage :
- 80V
- JESD-30 Code :
- R-PSFM-T3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 2W
- Terminal Finish :
- TIN SILVER COPPER
- JESD-609 Code :
- e1
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Published :
- 1993
- Mount :
- Through Hole
- Number of Elements :
- 1
- Base Part Number :
- BDX33
- Datasheets
- BDX33B-S
NPN - Darlington -65°C~150°C TJ 10mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX33B-S Overview
This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 6mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 10A volts is possible.
BDX33B-S Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
BDX33B-S Applications
There are a lot of Bourns Inc.
BDX33B-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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