BDX33BG

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Mfr.Part #
BDX33BG
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 80V 10A TO220
Stock
6
In Stock :
6

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lifecycle Status :
ACTIVE (Last Updated: 5 hours ago)
Number of Terminations :
3
Voltage - Rated DC :
80V
Polarity :
NPN
Peak Reflow Temperature (Cel) :
260
RoHS Status :
ROHS3 Compliant
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 6mA, 3A
JEDEC-95 Code :
TO-220AB
Current - Collector Cutoff (Max) :
500μA
Collector Emitter Saturation Voltage :
2.5V
Collector Emitter Voltage (VCEO) :
80V
hFE Min :
750
Mount :
Through Hole
Pbfree Code :
yes
Contact Plating :
Tin
Collector Emitter Breakdown Voltage :
80V
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
JESD-609 Code :
e3
Power Dissipation :
70W
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Operating Temperature :
-65°C~150°C TJ
Transistor Application :
SWITCHING
Max Collector Current :
10A
Current Rating :
10A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-220-3
Factory Lead Time :
2 Weeks
Time@Peak Reflow Temperature-Max (s) :
40
Transition Frequency :
3MHz
Element Configuration :
Single
Base Part Number :
BDX33
Transistor Element Material :
SILICON
Max Power Dissipation :
70W
REACH SVHC :
No SVHC
Case Connection :
COLLECTOR
Number of Elements :
1
Radiation Hardening :
No
Collector Base Voltage (VCBO) :
80V
Transistor Type :
NPN - Darlington
Number of Pins :
3
Pin Count :
3
Emitter Base Voltage (VEBO) :
5V
Published :
2011
Lead Free :
Lead Free
ECCN Code :
EAR99
Mounting Type :
Through Hole
Packaging :
Tube
Introducing Transistors - Bipolar (BJT) - Single onsemi BDX33BG from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Package / Case:TO-220-3, Base Part Number:BDX33, Number of Pins:3, Mounting Type:Through Hole, BDX33BG pinout, BDX33BG datasheet PDF, BDX33BG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDX33BG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDX33BG


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDX33BG Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 3A 3V.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.When VCE saturation is 2.5V @ 6mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 3MHz.A maximum collector current of 10A volts can be achieved.

BDX33BG Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 3MHz


BDX33BG Applications


There are a lot of ON Semiconductor
BDX33BG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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