BDX33BG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

500μA

Voltage - Rated DC :

80V

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

750

Pbfree Code :

yes

Transition Frequency :

3MHz

Polarity :

NPN

Element Configuration :

Single

Contact Plating :

Tin

Package / Case :

TO-220-3

Collector Emitter Breakdown Voltage :

80V

Current Rating :

10A

Factory Lead Time :

2 Weeks

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

80V

Power Dissipation :

70W

Max Power Dissipation :

70W

Number of Elements :

1

Packaging :

Tube

Collector Emitter Saturation Voltage :

2.5V

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 5 hours ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Mounting Type :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 6mA, 3A

Lead Free :

Lead Free

Max Collector Current :

10A

Emitter Base Voltage (VEBO) :

5V

Published :

2011

JEDEC-95 Code :

TO-220AB

Base Part Number :

BDX33

Mount :

Through Hole

Case Connection :

COLLECTOR

Collector Base Voltage (VCBO) :

80V

Number of Terminations :

3

REACH SVHC :

No SVHC

Transistor Type :

NPN - Darlington

Operating Temperature :

-65°C~150°C TJ

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 3A 3V