BDX33BG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

5V

hFE Min :

750

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 6mA, 3A

Lead Free :

Lead Free

Transistor Type :

NPN - Darlington

Voltage - Rated DC :

80V

Polarity :

NPN

Contact Plating :

Tin

Max Collector Current :

10A

Time@Peak Reflow Temperature-Max (s) :

40

Case Connection :

COLLECTOR

Package / Case :

TO-220-3

Max Power Dissipation :

70W

ECCN Code :

EAR99

JESD-609 Code :

e3

Number of Elements :

1

Collector Emitter Saturation Voltage :

2.5V

Current Rating :

10A

Packaging :

Tube

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 3A 3V

Pbfree Code :

yes

Transition Frequency :

3MHz

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Mount :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 5 hours ago)

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

500μA

JEDEC-95 Code :

TO-220AB

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Power Dissipation :

70W

Published :

2011

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

80V

Number of Terminations :

3

Element Configuration :

Single

Operating Temperature :

-65°C~150°C TJ

Factory Lead Time :

2 Weeks

Collector Base Voltage (VCBO) :

80V

Base Part Number :

BDX33

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

80V

Radiation Hardening :

No