BDX33B
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- Mfr.Part #
- BDX33B
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 10A TO220-3
- Stock
- 21,434
- In Stock ：
- 21,434
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 80V
- hFE Min :
- 750
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 500μA
- Lifecycle Status :
- ACTIVE (Last Updated: 5 hours ago)
- Max Power Dissipation :
- 70W
- Lead Free :
- Lead Free
- Transistor Type :
- NPN - Darlington
- Operating Temperature :
- -65°C~150°C TJ
- JEDEC-95 Code :
- TO-220AB
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Collector Emitter Saturation Voltage :
- 2.5V
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 6mA, 3A
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Elements :
- 1
- Transition Frequency :
- 3MHz
- Mounting Type :
- Through Hole
- Current Rating :
- 10A
- Max Collector Current :
- 10A
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 2 Weeks
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Base Part Number :
- BDX33
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Published :
- 2011
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Polarity :
- NPN
- Transistor Application :
- SWITCHING
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Power Dissipation :
- 70W
- Voltage - Rated DC :
- 80V
- Datasheets
- BDX33B
NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX33BG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 3A 3V.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.When VCE saturation is 2.5V @ 6mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 3MHz.A maximum collector current of 10A volts can be achieved.
BDX33BG Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 3MHz
BDX33BG Applications
There are a lot of ON Semiconductor
BDX33BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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