BDX33B
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- Mfr.Part #
- BDX33B
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 10A TO220-3
- Stock
- 21,434
- In Stock ：
- 21,434
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 5V
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 10A
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 80V
- Max Power Dissipation :
- 70W
- Base Part Number :
- BDX33
- Package / Case :
- TO-220-3
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2011
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Polarity :
- NPN
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 5 hours ago)
- Voltage - Rated DC :
- 80V
- Power Dissipation :
- 70W
- Transition Frequency :
- 3MHz
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 500μA
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 6mA, 3A
- JEDEC-95 Code :
- TO-220AB
- Current Rating :
- 10A
- Transistor Type :
- NPN - Darlington
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Saturation Voltage :
- 2.5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- hFE Min :
- 750
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 80V
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Datasheets
- BDX33B
BDX33B Documents
NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX33BG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 3A 3V.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.When VCE saturation is 2.5V @ 6mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 3MHz.A maximum collector current of 10A volts can be achieved.
BDX33BG Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 3MHz
BDX33BG Applications
There are a lot of ON Semiconductor
BDX33BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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