BDX33B
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- Mfr.Part #
- BDX33B
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 10A TO220-3
- Stock
- 21,434
- In Stock ：
- 21,434
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 80V
- Max Power Dissipation :
- 70W
- Transistor Type :
- NPN - Darlington
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Base Part Number :
- BDX33
- Polarity :
- NPN
- Package / Case :
- TO-220-3
- JESD-609 Code :
- e3
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 80V
- Mount :
- Through Hole
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Lead Free :
- Lead Free
- Published :
- 2011
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Number of Elements :
- 1
- Max Collector Current :
- 10A
- Power Dissipation :
- 70W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JEDEC-95 Code :
- TO-220AB
- Factory Lead Time :
- 2 Weeks
- Current - Collector Cutoff (Max) :
- 500μA
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 3MHz
- Packaging :
- Tube
- Current Rating :
- 10A
- Number of Terminations :
- 3
- hFE Min :
- 750
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 80V
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 2.5V
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 80V
- Lifecycle Status :
- ACTIVE (Last Updated: 5 hours ago)
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 6mA, 3A
- Datasheets
- BDX33B
BDX33B Documents
NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX33BG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 3A 3V.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.When VCE saturation is 2.5V @ 6mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 3MHz.A maximum collector current of 10A volts can be achieved.
BDX33BG Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 3MHz
BDX33BG Applications
There are a lot of ON Semiconductor
BDX33BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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