BDX33CG
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- Mfr.Part #
- BDX33CG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 10A TO220
- Stock
- 1,328
- In Stock ：
- 1,328
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 6mA, 3A
- Length :
- 10.53mm
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 6.000006g
- Transition Frequency :
- 3MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Packaging :
- Tube
- Factory Lead Time :
- 5 Weeks
- Number of Pins :
- 3
- Base Part Number :
- BDX33
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 500μA
- Collector Emitter Saturation Voltage :
- 2.5V
- Polarity :
- NPN
- Transistor Type :
- NPN - Darlington
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Published :
- 2006
- Package / Case :
- TO-220-3
- Element Configuration :
- Single
- Surface Mount :
- No
- Collector Emitter Voltage (VCEO) :
- 100V
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Height :
- 15.75mm
- Continuous Collector Current :
- 4A
- Case Connection :
- COLLECTOR
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 70W
- hFE Min :
- 750
- Max Collector Current :
- 10A
- Collector Base Voltage (VCBO) :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- 100V
- Operating Temperature :
- -65°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- 10A
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 100V
- Radiation Hardening :
- No
- Width :
- 4.83mm
- Power Dissipation :
- 70W
- Datasheets
- BDX33CG
NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX33CG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 3A 3V.With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 6mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 10A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 10A volts at its maximum.
BDX33CG Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 3MHz
BDX33CG Applications
There are a lot of ON Semiconductor
BDX33CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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