BDX33B

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Pbfree Code :

yes

Mounting Type :

Through Hole

Number of Elements :

1

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

80V

Max Power Dissipation :

70W

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 6mA, 3A

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 3A 3V

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Published :

2011

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

REACH SVHC :

No SVHC

Max Collector Current :

10A

Current - Collector Cutoff (Max) :

500μA

Collector Emitter Voltage (VCEO) :

80V

Number of Pins :

3

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

2.5V

Current Rating :

10A

Packaging :

Tube

Lead Free :

Lead Free

Voltage - Rated DC :

80V

Power Dissipation :

70W

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-65°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 5 hours ago)

Transistor Type :

NPN - Darlington

Case Connection :

COLLECTOR

hFE Min :

750

Pin Count :

3

Factory Lead Time :

2 Weeks

Base Part Number :

BDX33

Radiation Hardening :

No

Polarity :

NPN

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Element Configuration :

Single

Mount :

Through Hole

Transition Frequency :

3MHz

Transistor Application :

SWITCHING

Emitter Base Voltage (VEBO) :

5V

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin