BDX33B

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Mfr.Part #
BDX33B
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 80V 10A TO220
Stock
17,173
In Stock :
17,173

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Peak Reflow Temperature (Cel) :
260
Time@Peak Reflow Temperature-Max (s) :
40
Mount :
Through Hole
JEDEC-95 Code :
TO-220AB
Collector Emitter Breakdown Voltage :
80V
Collector Emitter Saturation Voltage :
2.5V
Lead Free :
Lead Free
Published :
2011
Packaging :
Tube
Current - Collector Cutoff (Max) :
500μA
hFE Min :
750
Number of Terminations :
3
REACH SVHC :
No SVHC
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Transistor Application :
SWITCHING
Element Configuration :
Single
Lifecycle Status :
ACTIVE (Last Updated: 5 hours ago)
Polarity :
NPN
Factory Lead Time :
2 Weeks
Operating Temperature :
-65°C~150°C TJ
Mounting Type :
Through Hole
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Radiation Hardening :
No
Pin Count :
3
Max Power Dissipation :
70W
Transition Frequency :
3MHz
Transistor Type :
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 6mA, 3A
Transistor Element Material :
SILICON
Current Rating :
10A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Power Dissipation :
70W
Package / Case :
TO-220-3
Max Collector Current :
10A
Emitter Base Voltage (VEBO) :
5V
Collector Base Voltage (VCBO) :
80V
Contact Plating :
Tin
ECCN Code :
EAR99
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Case Connection :
COLLECTOR
Collector Emitter Voltage (VCEO) :
80V
Number of Pins :
3
Base Part Number :
BDX33
Voltage - Rated DC :
80V
Datasheets
BDX33B
Introducing Transistors - Bipolar (BJT) - Single onsemi BDX33B from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Pins:3, Base Part Number:BDX33, BDX33B pinout, BDX33B datasheet PDF, BDX33B amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDX33B ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDX33B


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDX33BG Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 3A 3V.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.When VCE saturation is 2.5V @ 6mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 3MHz.A maximum collector current of 10A volts can be achieved.

BDX33BG Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 3MHz


BDX33BG Applications


There are a lot of ON Semiconductor
BDX33BG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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