BDX33B

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Number of Terminations :

3

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Max Power Dissipation :

70W

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 3A 3V

Case Connection :

COLLECTOR

Collector Emitter Saturation Voltage :

2.5V

Transition Frequency :

3MHz

Package / Case :

TO-220-3

Current - Collector Cutoff (Max) :

500μA

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Radiation Hardening :

No

Mount :

Through Hole

Transistor Type :

NPN - Darlington

Packaging :

Tube

Collector Emitter Breakdown Voltage :

80V

Operating Temperature :

-65°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

750

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 5 hours ago)

Power Dissipation :

70W

Transistor Application :

SWITCHING

Element Configuration :

Single

Pin Count :

3

Polarity :

NPN

Factory Lead Time :

2 Weeks

Base Part Number :

BDX33

Number of Pins :

3

Voltage - Rated DC :

80V

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 6mA, 3A

Pbfree Code :

yes

Max Collector Current :

10A

JEDEC-95 Code :

TO-220AB

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Published :

2011

Current Rating :

10A

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

5V

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

80V

Collector Emitter Voltage (VCEO) :

80V