BDX33B

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Mfr.Part #
BDX33B
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 80V 10A TO220
Stock
17,173
In Stock :
17,173

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) :
500μA
Time@Peak Reflow Temperature-Max (s) :
40
ECCN Code :
EAR99
Contact Plating :
Tin
Number of Elements :
1
Max Power Dissipation :
70W
Published :
2011
Peak Reflow Temperature (Cel) :
260
Operating Temperature :
-65°C~150°C TJ
Voltage - Rated DC :
80V
Power Dissipation :
70W
Packaging :
Tube
Collector Emitter Saturation Voltage :
2.5V
Polarity :
NPN
RoHS Status :
ROHS3 Compliant
Collector Emitter Voltage (VCEO) :
80V
Transition Frequency :
3MHz
Base Part Number :
BDX33
Lead Free :
Lead Free
Collector Base Voltage (VCBO) :
80V
Factory Lead Time :
2 Weeks
Collector Emitter Breakdown Voltage :
80V
Number of Terminations :
3
Radiation Hardening :
No
Pin Count :
3
Mount :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Transistor Application :
SWITCHING
Emitter Base Voltage (VEBO) :
5V
Case Connection :
COLLECTOR
REACH SVHC :
No SVHC
hFE Min :
750
Package / Case :
TO-220-3
Transistor Type :
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 6mA, 3A
Lifecycle Status :
ACTIVE (Last Updated: 5 hours ago)
Element Configuration :
Single
Pbfree Code :
yes
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
JEDEC-95 Code :
TO-220AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Current Rating :
10A
Number of Pins :
3
Max Collector Current :
10A
Datasheets
BDX33B
Introducing Transistors - Bipolar (BJT) - Single onsemi BDX33B from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Base Part Number:BDX33, Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Pins:3, BDX33B pinout, BDX33B datasheet PDF, BDX33B amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDX33B ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDX33B


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDX33BG Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 3A 3V.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.When VCE saturation is 2.5V @ 6mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 3MHz.A maximum collector current of 10A volts can be achieved.

BDX33BG Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 3MHz


BDX33BG Applications


There are a lot of ON Semiconductor
BDX33BG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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