BDX33B

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Mfr.Part #
BDX33B
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 80V 10A TO220
Stock
17,173
In Stock :
17,173

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pbfree Code :
yes
Mounting Type :
Through Hole
Number of Elements :
1
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
80V
Max Power Dissipation :
70W
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 6mA, 3A
Number of Terminations :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Peak Reflow Temperature (Cel) :
260
JESD-609 Code :
e3
Published :
2011
Package / Case :
TO-220-3
JEDEC-95 Code :
TO-220AB
REACH SVHC :
No SVHC
Max Collector Current :
10A
Current - Collector Cutoff (Max) :
500μA
Collector Emitter Voltage (VCEO) :
80V
Number of Pins :
3
Transistor Element Material :
SILICON
Collector Emitter Saturation Voltage :
2.5V
Current Rating :
10A
Packaging :
Tube
Lead Free :
Lead Free
Voltage - Rated DC :
80V
Power Dissipation :
70W
Time@Peak Reflow Temperature-Max (s) :
40
Operating Temperature :
-65°C~150°C TJ
Lifecycle Status :
ACTIVE (Last Updated: 5 hours ago)
Transistor Type :
NPN - Darlington
Case Connection :
COLLECTOR
hFE Min :
750
Pin Count :
3
Factory Lead Time :
2 Weeks
Base Part Number :
BDX33
Radiation Hardening :
No
Polarity :
NPN
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Element Configuration :
Single
Mount :
Through Hole
Transition Frequency :
3MHz
Transistor Application :
SWITCHING
Emitter Base Voltage (VEBO) :
5V
RoHS Status :
ROHS3 Compliant
Collector Base Voltage (VCBO) :
80V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Contact Plating :
Tin
Datasheets
BDX33B
Introducing Transistors - Bipolar (BJT) - Single onsemi BDX33B from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-220-3, Number of Pins:3, Operating Temperature:-65°C~150°C TJ, Base Part Number:BDX33, BDX33B pinout, BDX33B datasheet PDF, BDX33B amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDX33B ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDX33B


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDX33BG Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 3A 3V.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.When VCE saturation is 2.5V @ 6mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 3MHz.A maximum collector current of 10A volts can be achieved.

BDX33BG Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 3MHz


BDX33BG Applications


There are a lot of ON Semiconductor
BDX33BG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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