BDX33C

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Pin Count :

3

Transistor Element Material :

SILICON

Power Dissipation :

70W

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 3A 3V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

JESD-609 Code :

e3

Operating Temperature :

150°C TJ

Radiation Hardening :

No

Length :

10.4mm

Max Collector Current :

10A

Lead Free :

Lead Free

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 6mA, 3A

Height :

9.15mm

Polarity :

NPN

Max Power Dissipation :

70W

Width :

4.6mm

Transition Frequency :

3MHz

Collector Base Voltage (VCBO) :

100V

Collector Emitter Breakdown Voltage :

100V

Package / Case :

TO-220-3

Transistor Type :

NPN - Darlington

Contact Plating :

Tin

hFE Min :

750

JESD-30 Code :

R-PSFM-T3

Collector Emitter Voltage (VCEO) :

100V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Base Part Number :

BDX33

Transistor Application :

SWITCHING

Mount :

Through Hole

Current - Collector Cutoff (Max) :

500μA

Factory Lead Time :

8 Weeks

Packaging :

Tube

Number of Terminations :

3

Number of Pins :

2

Number of Elements :

1

Collector Emitter Saturation Voltage :

2.5V