BDX33C

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Mfr.Part #
BDX33C
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 100V 10A TO220
Stock
33,381
In Stock :
33,381

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Radiation Hardening :
No
hFE Min :
750
Width :
4.6mm
Pin Count :
3
ECCN Code :
EAR99
Max Power Dissipation :
70W
RoHS Status :
ROHS3 Compliant
Mount :
Through Hole
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Saturation Voltage :
2.5V
Length :
10.4mm
JESD-30 Code :
R-PSFM-T3
Operating Temperature :
150°C TJ
Packaging :
Tube
Polarity :
NPN
Transistor Element Material :
SILICON
REACH SVHC :
No SVHC
Height :
9.15mm
Contact Plating :
Tin
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 6mA, 3A
Factory Lead Time :
8 Weeks
Package / Case :
TO-220-3
Collector Emitter Breakdown Voltage :
100V
JESD-609 Code :
e3
Collector Base Voltage (VCBO) :
100V
Transistor Application :
SWITCHING
Number of Terminations :
3
Transition Frequency :
3MHz
Element Configuration :
Single
Number of Pins :
2
Lead Free :
Lead Free
Power Dissipation :
70W
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Transistor Type :
NPN - Darlington
Mounting Type :
Through Hole
Base Part Number :
BDX33
Current - Collector Cutoff (Max) :
500μA
Collector Emitter Voltage (VCEO) :
100V
Max Collector Current :
10A
Datasheets
BDX33C
Introducing Transistors - Bipolar (BJT) - Single onsemi BDX33C from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-220-3, Number of Terminations:3, Number of Pins:2, Mounting Type:Through Hole, Base Part Number:BDX33, BDX33C pinout, BDX33C datasheet PDF, BDX33C amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDX33C ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDX33C


NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDX33C Overview


This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 3MHz.The maximum collector current is 10A volts.

BDX33C Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
a transition frequency of 3MHz


BDX33C Applications


There are a lot of STMicroelectronics
BDX33C applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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