BD681S
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- Mfr.Part #
- BD681S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 4A TO126-3
- Stock
- 4
- In Stock ：
- 4
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2000
- Continuous Collector Current :
- 4A
- REACH SVHC :
- No SVHC
- Current Rating :
- 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Transistor Type :
- NPN - Darlington
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 2.5V
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 100V
- Collector Base Voltage (VCBO) :
- 100V
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Factory Lead Time :
- 6 Weeks
- Polarity :
- NPN
- Height :
- 11mm
- Weight :
- 761mg
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Length :
- 8mm
- Current - Collector Cutoff (Max) :
- 500μA
- hFE Min :
- 750
- Collector Emitter Voltage (VCEO) :
- 100V
- Radiation Hardening :
- No
- Base Part Number :
- BD681
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Transition Frequency :
- 10MHz
- Package / Case :
- TO-225AA, TO-126-3
- Voltage - Rated DC :
- 100V
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 4A
- Width :
- 3.25mm
- Max Power Dissipation :
- 40W
- Transistor Element Material :
- SILICON
- Datasheets
- BD681S
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD681S Overview
In this device, the DC current gain is 750 @ 1.5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 30mA, 1.5A.Maintaining the continuous collector voltage at 4A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).10MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
BD681S Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz
BD681S Applications
There are a lot of ON Semiconductor
BD681S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| BD680CS_L2_00001 | onsemi | 17,438 | SURFACE MOUNT SCHOTTKY BARRIER R |
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| BD681S | onsemi | 4 | TRANS NPN DARL 100V 4A TO126-3 |
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