BD681S

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 30mA, 1.5A

Lead Free :

Lead Free

Mount :

Through Hole

ECCN Code :

EAR99

Continuous Collector Current :

4A

Max Power Dissipation :

40W

Published :

2000

Factory Lead Time :

6 Weeks

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

100V

Radiation Hardening :

No

Number of Elements :

1

Contact Plating :

Tin

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

Number of Terminations :

3

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

100V

Max Collector Current :

4A

RoHS Status :

ROHS3 Compliant

Length :

8mm

Collector Base Voltage (VCBO) :

100V

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

500μA

Current Rating :

4A

Mounting Type :

Through Hole

Packaging :

Bulk

JESD-609 Code :

e3

Element Configuration :

Single

Voltage - Rated DC :

100V

Transistor Type :

NPN - Darlington

Emitter Base Voltage (VEBO) :

5V

Weight :

761mg

Polarity :

NPN

hFE Min :

750

Base Part Number :

BD681

Package / Case :

TO-225AA, TO-126-3

Height :

11mm

Operating Temperature :

150°C TJ

Number of Pins :

3

Transition Frequency :

10MHz

Collector Emitter Saturation Voltage :

2.5V

Width :

3.25mm

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)