BD681
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- Mfr.Part #
- BD681
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 4A TO126
- Stock
- 11,848
- In Stock ：
- 11,848
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 2.5V
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- BD681
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Power Dissipation :
- 40W
- Mount :
- Through Hole
- Factory Lead Time :
- 8 Weeks
- Lead Free :
- Lead Free
- Transition Frequency :
- 10MHz
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 500μA
- Continuous Collector Current :
- 4A
- hFE Min :
- 750
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Transistor Type :
- NPN - Darlington
- Current Rating :
- 4A
- Packaging :
- Tube
- Number of Terminations :
- 3
- Max Collector Current :
- 4A
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 100V
- Length :
- 7.8mm
- Max Power Dissipation :
- 40W
- Collector Emitter Voltage (VCEO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Number of Elements :
- 1
- Package / Case :
- TO-225AA, TO-126-3
- JESD-609 Code :
- e3
- Case Connection :
- Isolated
- Height :
- 10.8mm
- Width :
- 2.7mm
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Voltage - Rated DC :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Collector Emitter Breakdown Voltage :
- 100V
- Polarity :
- NPN
- Datasheets
- BD681
BD681 Documents
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NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD681 Overview
This device has a DC current gain of 750 @ 1.5A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 30mA, 1.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 10MHz.A maximum collector current of 4A volts is possible.
BD681 Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz
BD681 Applications
There are a lot of STMicroelectronics
BD681 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
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| BD680ASTU | onsemi | 220 | TRANS PNP DARL 80V 4A TO126-3 |
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| BD680CS_L2_00001 | onsemi | 17,438 | SURFACE MOUNT SCHOTTKY BARRIER R |
| BD680CS_S2_00001 | onsemi | 12,845 | SURFACE MOUNT SCHOTTKY BARRIER R |
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| BD681S | onsemi | 4 | TRANS NPN DARL 100V 4A TO126-3 |
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