BD680

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Mfr.Part #
BD680
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP DARL 80V 4A TO126
Stock
44,228
In Stock :
44,228

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-225AA, TO-126-3
Mount :
Through Hole
Number of Pins :
3
Collector Base Voltage (VCBO) :
80V
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 1.5A 3V
Number of Elements :
1
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Collector Emitter Saturation Voltage :
2.5V
Mounting Type :
Through Hole
Transistor Type :
PNP - Darlington
Transition Frequency :
10MHz
Operating Temperature :
150°C TJ
Voltage - Rated DC :
-80V
Factory Lead Time :
8 Weeks
Element Configuration :
Single
Transistor Application :
SWITCHING
Base Part Number :
BD680
Packaging :
Tube
Case Connection :
Isolated
Current Rating :
-4A
Emitter Base Voltage (VEBO) :
5V
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 30mA, 1.5A
JESD-609 Code :
e3
Max Power Dissipation :
40W
Pin Count :
3
Collector Emitter Breakdown Voltage :
80V
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Radiation Hardening :
No
Power Dissipation :
40W
Polarity :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
80V
Contact Plating :
Tin
Length :
7.8mm
Number of Terminations :
3
Max Collector Current :
4A
REACH SVHC :
No SVHC
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Height :
10.8mm
Width :
2.7mm
hFE Min :
750
Current - Collector Cutoff (Max) :
500μA
Datasheets
BD680
Introducing Transistors - Bipolar (BJT) - Single onsemi BD680 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Base Part Number:BD680, Number of Terminations:3, BD680 pinout, BD680 datasheet PDF, BD680 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD680 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD680


PNP - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole

BD680 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 1.5A 3V.With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 30mA, 1.5A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.A transition frequency of 10MHz is present in the part.Collector current can be as low as 4A volts at its maximum.

BD680 Features


the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 10MHz


BD680 Applications


There are a lot of STMicroelectronics
BD680 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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