BD680

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Mfr.Part #
BD680
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP DARL 80V 4A TO126
Stock
44,228
In Stock :
44,228

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Tube
Base Part Number :
BD680
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 1.5A 3V
Current Rating :
-4A
Radiation Hardening :
No
ECCN Code :
EAR99
JESD-609 Code :
e3
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 30mA, 1.5A
Lead Free :
Lead Free
Transition Frequency :
10MHz
Collector Emitter Saturation Voltage :
2.5V
Current - Collector Cutoff (Max) :
500μA
Mount :
Through Hole
Factory Lead Time :
8 Weeks
Collector Emitter Voltage (VCEO) :
80V
Transistor Application :
SWITCHING
Polarity :
PNP
Number of Terminations :
3
Power Dissipation :
40W
Collector Emitter Breakdown Voltage :
80V
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Width :
2.7mm
Element Configuration :
Single
Pin Count :
3
Transistor Element Material :
SILICON
Case Connection :
Isolated
RoHS Status :
ROHS3 Compliant
hFE Min :
750
Height :
10.8mm
Transistor Type :
PNP - Darlington
Max Power Dissipation :
40W
Collector Base Voltage (VCBO) :
80V
Number of Elements :
1
Number of Pins :
3
Voltage - Rated DC :
-80V
Mounting Type :
Through Hole
Length :
7.8mm
REACH SVHC :
No SVHC
Contact Plating :
Tin
Operating Temperature :
150°C TJ
Package / Case :
TO-225AA, TO-126-3
Max Collector Current :
4A
Emitter Base Voltage (VEBO) :
5V
Datasheets
BD680
Introducing Transistors - Bipolar (BJT) - Single onsemi BD680 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BD680, Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Package / Case:TO-225AA, TO-126-3, BD680 pinout, BD680 datasheet PDF, BD680 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD680 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD680


PNP - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole

BD680 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 1.5A 3V.With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 30mA, 1.5A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.A transition frequency of 10MHz is present in the part.Collector current can be as low as 4A volts at its maximum.

BD680 Features


the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 10MHz


BD680 Applications


There are a lot of STMicroelectronics
BD680 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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