BD681S
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- Mfr.Part #
- BD681S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 4A TO126-3
- Stock
- 4
- In Stock ：
- 4
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Collector Emitter Breakdown Voltage :
- 100V
- Mount :
- Through Hole
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 2.5V
- hFE Min :
- 750
- Element Configuration :
- Single
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Max Power Dissipation :
- 40W
- Pbfree Code :
- yes
- Polarity :
- NPN
- JESD-609 Code :
- e3
- Current Rating :
- 4A
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- Published :
- 2000
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 10MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 6 Weeks
- Transistor Element Material :
- SILICON
- Width :
- 3.25mm
- Number of Elements :
- 1
- Package / Case :
- TO-225AA, TO-126-3
- Weight :
- 761mg
- Transistor Type :
- NPN - Darlington
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Max Collector Current :
- 4A
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 8mm
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Current - Collector Cutoff (Max) :
- 500μA
- Voltage - Rated DC :
- 100V
- Continuous Collector Current :
- 4A
- Mounting Type :
- Through Hole
- Height :
- 11mm
- Base Part Number :
- BD681
- Datasheets
- BD681S
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD681S Overview
In this device, the DC current gain is 750 @ 1.5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 30mA, 1.5A.Maintaining the continuous collector voltage at 4A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).10MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
BD681S Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz
BD681S Applications
There are a lot of ON Semiconductor
BD681S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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