BD681S
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- Mfr.Part #
- BD681S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 4A TO126-3
- Stock
- 4
- In Stock ：
- 4
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 761mg
- Number of Elements :
- 1
- Height :
- 11mm
- Voltage - Rated DC :
- 100V
- Current Rating :
- 4A
- Max Collector Current :
- 4A
- Collector Emitter Breakdown Voltage :
- 100V
- REACH SVHC :
- No SVHC
- hFE Min :
- 750
- Length :
- 8mm
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 500μA
- Max Power Dissipation :
- 40W
- Collector Emitter Saturation Voltage :
- 2.5V
- Published :
- 2000
- Transition Frequency :
- 10MHz
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Continuous Collector Current :
- 4A
- Collector Base Voltage (VCBO) :
- 100V
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Base Part Number :
- BD681
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Polarity :
- NPN
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 6 Weeks
- Contact Plating :
- Tin
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Width :
- 3.25mm
- Transistor Type :
- NPN - Darlington
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Datasheets
- BD681S
BD681S Documents
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD681S Overview
In this device, the DC current gain is 750 @ 1.5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 30mA, 1.5A.Maintaining the continuous collector voltage at 4A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).10MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
BD681S Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz
BD681S Applications
There are a lot of ON Semiconductor
BD681S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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