BD681

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Mfr.Part #
BD681
Manufacturer
STMicroelectronics
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN DARL 100V 4A SOT32-3
Stock
11,848
In Stock :
11,848

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 30mA, 1.5A
Case Connection :
Isolated
Continuous Collector Current :
4A
Pin Count :
3
Packaging :
Tube
Mount :
Through Hole
Emitter Base Voltage (VEBO) :
5V
Width :
2.7mm
Base Part Number :
BD681
Transistor Element Material :
SILICON
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 1.5A 3V
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
100V
hFE Min :
750
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Radiation Hardening :
No
Number of Terminations :
3
Max Power Dissipation :
40W
Collector Base Voltage (VCBO) :
100V
Transistor Application :
SWITCHING
Collector Emitter Voltage (VCEO) :
100V
Transition Frequency :
10MHz
Number of Pins :
3
Length :
7.8mm
Max Collector Current :
4A
Voltage - Rated DC :
100V
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Current - Collector Cutoff (Max) :
500μA
Factory Lead Time :
8 Weeks
Power Dissipation :
40W
Polarity :
NPN
Transistor Type :
NPN - Darlington
Mounting Type :
Through Hole
Lead Free :
Lead Free
Current Rating :
4A
Height :
10.8mm
Collector Emitter Saturation Voltage :
2.5V
Package / Case :
TO-225AA, TO-126-3
Contact Plating :
Tin
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Operating Temperature :
150°C TJ
Number of Elements :
1
Datasheets
BD681
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BD681 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BD681, Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, Operating Temperature:150°C TJ, BD681 pinout, BD681 datasheet PDF, BD681 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BD681 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BD681


NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole

BD681 Overview


This device has a DC current gain of 750 @ 1.5A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 30mA, 1.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 10MHz.A maximum collector current of 4A volts is possible.

BD681 Features


the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz


BD681 Applications


There are a lot of STMicroelectronics
BD681 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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