BD681
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- Mfr.Part #
- BD681
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 4A SOT32-3
- Stock
- 11,848
- In Stock ：
- 11,848
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 2.5V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 40W
- Transistor Type :
- NPN - Darlington
- Length :
- 7.8mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Factory Lead Time :
- 8 Weeks
- Base Part Number :
- BD681
- ECCN Code :
- EAR99
- Continuous Collector Current :
- 4A
- Height :
- 10.8mm
- Current Rating :
- 4A
- Collector Emitter Breakdown Voltage :
- 100V
- Width :
- 2.7mm
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 500μA
- hFE Min :
- 750
- Polarity :
- NPN
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-225AA, TO-126-3
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Max Collector Current :
- 4A
- Emitter Base Voltage (VEBO) :
- 5V
- Voltage - Rated DC :
- 100V
- Power Dissipation :
- 40W
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 100V
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 10MHz
- JESD-609 Code :
- e3
- Case Connection :
- Isolated
- Datasheets
- BD681
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD681 Overview
This device has a DC current gain of 750 @ 1.5A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 30mA, 1.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 10MHz.A maximum collector current of 4A volts is possible.
BD681 Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz
BD681 Applications
There are a lot of STMicroelectronics
BD681 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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