BD680A
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- Mfr.Part #
- BD680A
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 4A SOT32-3
- Stock
- 49,827
- In Stock ：
- 49,827
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 2.8V
- Weight :
- 4.535924g
- Contact Plating :
- Tin
- Halogen Free :
- Halogen Free
- Transition Frequency :
- 1MHz
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- Published :
- 2006
- Polarity :
- PNP
- Length :
- 7.74mm
- Power Dissipation :
- 40W
- Collector Base Voltage (VCBO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 80V
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Transistor Type :
- PNP - Darlington
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Max Power Dissipation :
- 40W
- Pbfree Code :
- yes
- Packaging :
- Bulk
- Base Part Number :
- BD680
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- -80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Width :
- 2.66mm
- Max Collector Current :
- 4A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 11.04mm
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Element Configuration :
- Single
- Package / Case :
- TO-225AA, TO-126-3
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 750
- Lead Free :
- Lead Free
- Factory Lead Time :
- 2 Weeks
- Surface Mount :
- No
- Current - Collector Cutoff (Max) :
- 500μA
- Current Rating :
- -4A
- Datasheets
- BD680A
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PNP - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD680AG Overview
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.8V.A VCE saturation (Max) of 2.8V @ 40mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 1MHz.A maximum collector current of 4A volts is possible.
BD680AG Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 1MHz
BD680AG Applications
There are a lot of ON Semiconductor
BD680AG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BD680 | onsemi | 12,648 | TRANS PNP DARL 80V 4A SOT32-3 |
| BD680 | onsemi | 44,228 | TRANS PNP DARL 80V 4A TO126 |
| BD680A | onsemi | 15,537 | TRANS PNP DARL 80V 4A SOT32-3 |
| BD680AG | onsemi | 22,377 | TRANS PNP DARL 80V 4A TO126 |
| BD680AS | onsemi | 49,110 | TRANS PNP DARL 80V 4A TO126-3 |
| BD680ASTU | onsemi | 220 | TRANS PNP DARL 80V 4A TO126-3 |
| BD680ASTU | onsemi | 220 | TRANS PNP DARL 80V 4A TO126-3 |
| BD680CS_L2_00001 | onsemi | 17,438 | SURFACE MOUNT SCHOTTKY BARRIER R |
| BD680CS_S2_00001 | onsemi | 12,845 | SURFACE MOUNT SCHOTTKY BARRIER R |
| BD680G | onsemi | 29,071 | TRANS PNP DARL 80V 4A TO126 |
| BD681 | onsemi | 11,848 | TRANS NPN DARL 100V 4A SOT32-3 |
| BD681 | onsemi | 11,848 | TRANS NPN DARL 100V 4A TO126 |
| BD681G | onsemi | 1,440 | TRANS NPN DARL 100V 4A TO126 |
| BD681S | onsemi | 4 | TRANS NPN DARL 100V 4A TO126-3 |
| BD681S | onsemi | 4 | TRANS NPN DARL 100V 4A TO126-3 |
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