BD680G
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- Mfr.Part #
- BD680G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 4A TO126
- Stock
- 29,071
- In Stock ：
- 29,071
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 500μA
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Application :
- AMPLIFIER
- Length :
- 7.74mm
- Operating Temperature :
- -55°C~150°C TJ
- Polarity :
- PNP
- Mounting Type :
- Through Hole
- hFE Min :
- 750
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Power - Max :
- 40W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Halogen Free :
- Halogen Free
- Pbfree Code :
- yes
- Weight :
- 17.491656mg
- Transistor Type :
- PNP - Darlington
- Surface Mount :
- No
- Pin Count :
- 3
- Voltage - Rated DC :
- -80V
- Lead Free :
- Lead Free
- Published :
- 2008
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Factory Lead Time :
- 2 Weeks
- Packaging :
- Bulk
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Power Dissipation :
- 40W
- Package / Case :
- TO-225AA, TO-126-3
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 200MHz
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Current Rating :
- -4A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- BD680
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Collector Emitter Saturation Voltage :
- 2.5V
- Width :
- 2.66mm
- Height :
- 11.04mm
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 80V
- Max Collector Current :
- 4A
- Datasheets
- BD680G
BD680G Documents
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PNP - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD680G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 1.5A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 30mA, 1.5A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
BD680G Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 200MHz
BD680G Applications
There are a lot of ON Semiconductor
BD680G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| BD680 | onsemi | 12,648 | TRANS PNP DARL 80V 4A SOT32-3 |
| BD680 | onsemi | 44,228 | TRANS PNP DARL 80V 4A TO126 |
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| BD681S | onsemi | 4 | TRANS NPN DARL 100V 4A TO126-3 |
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