BD680G

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Mfr.Part #
BD680G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP DARL 80V 4A TO126
Stock
29,071
In Stock :
29,071

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Surface Mount :
No
Current - Collector Cutoff (Max) :
500μA
Voltage - Rated DC :
-80V
Polarity :
PNP
Transistor Type :
PNP - Darlington
Halogen Free :
Halogen Free
Height :
11.04mm
Peak Reflow Temperature (Cel) :
260
Pbfree Code :
yes
Max Collector Current :
4A
Width :
2.66mm
Published :
2008
REACH SVHC :
No SVHC
JESD-609 Code :
e3
Number of Terminations :
3
Terminal Finish :
Tin (Sn)
Weight :
17.491656mg
Collector Emitter Saturation Voltage :
2.5V
Transition Frequency :
200MHz
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Power - Max :
40W
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 30mA, 1.5A
Factory Lead Time :
2 Weeks
Collector Base Voltage (VCBO) :
80V
Element Configuration :
Single
Transistor Element Material :
SILICON
Lead Free :
Lead Free
Time@Peak Reflow Temperature-Max (s) :
40
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
3
Package / Case :
TO-225AA, TO-126-3
Number of Elements :
1
Base Part Number :
BD680
Pin Count :
3
Transistor Application :
AMPLIFIER
Mounting Type :
Through Hole
Max Power Dissipation :
40W
Collector Emitter Breakdown Voltage :
80V
ECCN Code :
EAR99
Collector Emitter Voltage (VCEO) :
80V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
hFE Min :
750
Current Rating :
-4A
RoHS Status :
ROHS3 Compliant
Packaging :
Bulk
Emitter Base Voltage (VEBO) :
5V
Length :
7.74mm
Radiation Hardening :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 1.5A 3V
Introducing Transistors - Bipolar (BJT) - Single onsemi BD680G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-225AA, TO-126-3, Base Part Number:BD680, Mounting Type:Through Hole, BD680G pinout, BD680G datasheet PDF, BD680G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD680G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD680G


PNP - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole

BD680G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 1.5A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 30mA, 1.5A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

BD680G Features


the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 200MHz


BD680G Applications


There are a lot of ON Semiconductor
BD680G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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