BD680AS
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- Mfr.Part #
- BD680AS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 4A TO126-3
- Stock
- 49,110
- In Stock ：
- 49,110
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 45V
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Termination :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -80V
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Packaging :
- Bulk
- Max Collector Current :
- 4A
- Current Rating :
- -4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Continuous Collector Current :
- -4A
- Emitter Base Voltage (VEBO) :
- -5V
- Power Dissipation :
- 14W
- hFE Min :
- 750
- Lead Free :
- Lead Free
- Weight :
- 761mg
- Collector Emitter Saturation Voltage :
- 2.8V
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 80V
- Transistor Type :
- PNP - Darlington
- Base Part Number :
- BD680
- Polarity :
- PNP
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 2.8V @ 40mA, 2A
- Element Configuration :
- Single
- Number of Pins :
- 3
- Factory Lead Time :
- 7 Weeks
- Current - Collector Cutoff (Max) :
- 500μA
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Package / Case :
- TO-225AA, TO-126-3
- Published :
- 2002
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Max Power Dissipation :
- 14W
- Collector Base Voltage (VCBO) :
- -80V
- Collector Emitter Voltage (VCEO) :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Datasheets
- BD680AS
PNP - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD680AS Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 2A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.8V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.8V @ 40mA, 2A.Single BJT transistor is recommended to keep the continuous collector voltage at -4A in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
BD680AS Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
BD680AS Applications
There are a lot of ON Semiconductor
BD680AS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| BD681S | onsemi | 4 | TRANS NPN DARL 100V 4A TO126-3 |
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