BD681G

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Mfr.Part #
BD681G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN DARL 100V 4A TO126
Stock
1,440
In Stock :
1,440

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Weight :
4.535924g
Current Rating :
4A
Collector Base Voltage (VCBO) :
100V
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
Current - Collector Cutoff (Max) :
500μA
Package / Case :
TO-225AA, TO-126-3
Base Part Number :
BD681
Collector Emitter Voltage (VCEO) :
100V
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
100V
Factory Lead Time :
7 Weeks
REACH SVHC :
No SVHC
Pin Count :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 1.5A 3V
Number of Terminations :
3
Number of Pins :
3
Peak Reflow Temperature (Cel) :
260
Surface Mount :
No
Length :
7.74mm
Contact Plating :
Tin
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Time@Peak Reflow Temperature-Max (s) :
40
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
AMPLIFIER
Number of Elements :
1
Height :
11.04mm
Halogen Free :
Halogen Free
Polarity :
NPN
Radiation Hardening :
No
Voltage - Rated DC :
100V
Width :
2.66mm
Max Collector Current :
4A
Pbfree Code :
yes
Lead Free :
Lead Free
Transistor Type :
NPN - Darlington
Packaging :
Bulk
Power Dissipation :
40W
Max Power Dissipation :
40W
Published :
1995
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 30mA, 1.5A
hFE Min :
750
Collector Emitter Saturation Voltage :
2.5V
Emitter Base Voltage (VEBO) :
5V
JESD-609 Code :
e3
Introducing Transistors - Bipolar (BJT) - Single onsemi BD681G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, Base Part Number:BD681, Number of Terminations:3, Number of Pins:3, BD681G pinout, BD681G datasheet PDF, BD681G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD681G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD681G


NPN - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole

BD681G Overview


This device has a DC current gain of 750 @ 1.5A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 30mA, 1.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 4A volts is possible.

BD681G Features


the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A


BD681G Applications


There are a lot of ON Semiconductor
BD681G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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