BD681G
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- Mfr.Part #
- BD681G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 4A TO126
- Stock
- 1,440
- In Stock ：
- 1,440
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- BD681
- Polarity :
- NPN
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 5V
- Surface Mount :
- No
- Transistor Type :
- NPN - Darlington
- Halogen Free :
- Halogen Free
- Length :
- 7.74mm
- Lead Free :
- Lead Free
- Power Dissipation :
- 40W
- Current Rating :
- 4A
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 4.535924g
- hFE Min :
- 750
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 2.5V
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 7 Weeks
- Max Power Dissipation :
- 40W
- Max Collector Current :
- 4A
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 100V
- Width :
- 2.66mm
- Collector Emitter Breakdown Voltage :
- 100V
- Packaging :
- Bulk
- Published :
- 1995
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Height :
- 11.04mm
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Base Voltage (VCBO) :
- 100V
- Package / Case :
- TO-225AA, TO-126-3
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 500μA
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- Datasheets
- BD681G
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NPN - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
BD681G Overview
This device has a DC current gain of 750 @ 1.5A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 30mA, 1.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 4A volts is possible.
BD681G Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
BD681G Applications
There are a lot of ON Semiconductor
BD681G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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