BD14010STU
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- Mfr.Part #
- BD14010STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 1.5A TO126-3
- Stock
- 819
- In Stock ：
- 819
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Base Part Number :
- BD140
- Polarity/Channel Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- Height :
- 11mm
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 80V
- Current Rating :
- -1.5A
- Collector Base Voltage (VCBO) :
- -80V
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- -500mV
- Power Dissipation :
- 1.25W
- Published :
- 2000
- hFE Min :
- 40
- Mount :
- Through Hole
- Max Power Dissipation :
- 12.5W
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Packaging :
- Tube
- Package / Case :
- TO-225AA, TO-126-3
- Max Collector Current :
- 1.5A
- Transistor Type :
- PNP
- Voltage - Rated DC :
- -80V
- Length :
- 8mm
- Weight :
- 761mg
- Element Configuration :
- Single
- Width :
- 3.25mm
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 6 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- -5V
- Datasheets
- BD14010STU
BD14010STU Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD14010STU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1.5A.A maximum collector current of 1.5A volts can be achieved.
BD14010STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
BD14010STU Applications
There are a lot of ON Semiconductor
BD14010STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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