BD14010STU

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Mfr.Part #
BD14010STU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 80V 1.5A TO126-3
Stock
819
In Stock :
819

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Polarity/Channel Type :
PNP
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Contact Plating :
Tin
Mounting Type :
Through Hole
ECCN Code :
EAR99
REACH SVHC :
No SVHC
Current Rating :
-1.5A
Transistor Application :
SWITCHING
Power Dissipation :
1.25W
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Pbfree Code :
yes
Lead Free :
Lead Free
Package / Case :
TO-225AA, TO-126-3
Number of Pins :
3
Voltage - Rated DC :
-80V
Transistor Type :
PNP
Width :
3.25mm
Emitter Base Voltage (VEBO) :
-5V
Operating Temperature :
150°C TJ
Base Part Number :
BD140
Current - Collector Cutoff (Max) :
100nA ICBO
hFE Min :
40
Max Power Dissipation :
12.5W
Max Collector Current :
1.5A
Collector Base Voltage (VCBO) :
-80V
Radiation Hardening :
No
Collector Emitter Saturation Voltage :
-500mV
Weight :
761mg
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Mount :
Through Hole
Collector Emitter Voltage (VCEO) :
80V
Collector Emitter Breakdown Voltage :
80V
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
63 @ 150mA 2V
JESD-609 Code :
e3
Published :
2000
Height :
11mm
Packaging :
Tube
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Number of Terminations :
3
Length :
8mm
Factory Lead Time :
6 Weeks
Introducing Transistors - Bipolar (BJT) - Single onsemi BD14010STU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, Number of Pins:3, Operating Temperature:150°C TJ, Base Part Number:BD140, Number of Terminations:3, BD14010STU pinout, BD14010STU datasheet PDF, BD14010STU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD14010STU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD14010STU


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole

BD14010STU Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1.5A.A maximum collector current of 1.5A volts can be achieved.

BD14010STU Features


the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A


BD14010STU Applications


There are a lot of ON Semiconductor
BD14010STU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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