BD140G
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- Mfr.Part #
- BD140G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 1.5A TO126
- Stock
- 181
- In Stock ：
- 181
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 6.35mm
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- hFE Min :
- 25
- Pin Count :
- 3
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 2 Weeks
- Transistor Type :
- PNP
- Current Rating :
- 1.5A
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -80V
- Contact Plating :
- Tin
- Package / Case :
- TO-225AA, TO-126-3
- Power Dissipation :
- 1.25W
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 4.535924g
- Number of Pins :
- 3
- Max Collector Current :
- 1.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 6.35mm
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Emitter Saturation Voltage :
- 500mV
- Surface Mount :
- No
- Pbfree Code :
- yes
- Published :
- 2001
- Max Power Dissipation :
- 1.25W
- Length :
- 6.35mm
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Bulk
- Collector Base Voltage (VCBO) :
- 100V
- Base Part Number :
- BD140
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Datasheets
- BD140G
BD140G Documents
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PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD140G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.5A.Collector current can be as low as 1.5A volts at its maximum.
BD140G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
BD140G Applications
There are a lot of ON Semiconductor
BD140G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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