BD140G
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- Mfr.Part #
- BD140G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 1.5A TO126
- Stock
- 181
- In Stock ：
- 181
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 80V
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 80V
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 1.5A
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 1.25W
- hFE Min :
- 25
- Number of Pins :
- 3
- Base Part Number :
- BD140
- Max Collector Current :
- 1.5A
- Radiation Hardening :
- No
- Length :
- 6.35mm
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Base Voltage (VCBO) :
- 100V
- Factory Lead Time :
- 2 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Element Configuration :
- Single
- Height :
- 6.35mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2001
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Transistor Application :
- AMPLIFIER
- Weight :
- 4.535924g
- Voltage - Rated DC :
- -80V
- Max Power Dissipation :
- 1.25W
- Width :
- 6.35mm
- Package / Case :
- TO-225AA, TO-126-3
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Tin
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Pin Count :
- 3
- Datasheets
- BD140G
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PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD140G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.5A.Collector current can be as low as 1.5A volts at its maximum.
BD140G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
BD140G Applications
There are a lot of ON Semiconductor
BD140G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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