BD140G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

80V

Factory Lead Time :

2 Weeks

hFE Min :

25

Transistor Application :

AMPLIFIER

Collector Emitter Breakdown Voltage :

80V

Packaging :

Bulk

Transistor Type :

PNP

REACH SVHC :

No SVHC

Length :

6.35mm

Mounting Type :

Through Hole

Number of Elements :

1

Height :

6.35mm

Radiation Hardening :

No

Published :

2001

Element Configuration :

Single

Number of Pins :

3

Collector Base Voltage (VCBO) :

100V

Current - Collector Cutoff (Max) :

100nA ICBO

Weight :

4.535924g

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1.25W

Package / Case :

TO-225AA, TO-126-3

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Voltage - Rated DC :

-80V

Collector Emitter Saturation Voltage :

500mV

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Pin Count :

3

Pbfree Code :

yes

Max Collector Current :

1.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

PNP

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

5V

Current Rating :

1.5A

Lead Free :

Lead Free

Base Part Number :

BD140

Surface Mount :

No

Max Power Dissipation :

1.25W

Width :

6.35mm

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)