BD140G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Height :

6.35mm

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Max Power Dissipation :

1.25W

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Packaging :

Bulk

Collector Emitter Saturation Voltage :

500mV

Number of Elements :

1

Transistor Type :

PNP

Published :

2001

Length :

6.35mm

Transistor Application :

AMPLIFIER

Base Part Number :

BD140

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Number of Pins :

3

Number of Terminations :

3

Surface Mount :

No

Collector Base Voltage (VCBO) :

100V

Voltage - Rated DC :

-80V

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-225AA, TO-126-3

Current Rating :

1.5A

Power Dissipation :

1.25W

Max Collector Current :

1.5A

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

5V

Radiation Hardening :

No

Polarity/Channel Type :

PNP

Contact Plating :

Tin

Factory Lead Time :

2 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

80V

Width :

6.35mm

Pin Count :

3

Weight :

4.535924g

hFE Min :

25

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

100nA ICBO