BD14016STU

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Mfr.Part #
BD14016STU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 80V 1.5A TO126-3
Stock
11
In Stock :
11

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
6 Weeks
Transistor Type :
PNP
Emitter Base Voltage (VEBO) :
5V
Polarity/Channel Type :
PNP
Element Configuration :
Single
Power Dissipation :
1.25W
Lead Free :
Lead Free
Height :
11mm
Number of Elements :
1
Transistor Application :
SWITCHING
Current :
15A
Collector Emitter Voltage (VCEO) :
80V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Radiation Hardening :
No
Mounting Type :
Through Hole
Number of Pins :
3
Transistor Element Material :
SILICON
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 2V
Contact Plating :
Tin
Collector Base Voltage (VCBO) :
80V
REACH SVHC :
No SVHC
Collector Emitter Breakdown Voltage :
80V
Base Part Number :
BD140
Max Power Dissipation :
1.25W
Voltage - Rated DC :
-80V
Packaging :
Tube
Collector Emitter Saturation Voltage :
-500mV
Package / Case :
TO-225AA, TO-126-3
Length :
8mm
Current Rating :
-1.5A
Voltage :
45V
Current - Collector Cutoff (Max) :
100nA ICBO
Mount :
Through Hole
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
1.5A
Published :
2017
Operating Temperature :
150°C TJ
Weight :
760.986249mg
Pbfree Code :
yes
Number of Terminations :
3
Lifecycle Status :
ACTIVE (Last Updated: 7 hours ago)
hFE Min :
40
Width :
3.25mm
Introducing Transistors - Bipolar (BJT) - Single onsemi BD14016STU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Base Part Number:BD140, Package / Case:TO-225AA, TO-126-3, Voltage:45V, Operating Temperature:150°C TJ, Number of Terminations:3, BD14016STU pinout, BD14016STU datasheet PDF, BD14016STU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD14016STU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD14016STU


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole

BD14016STU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1.5A.Collector current can be as low as 1.5A volts at its maximum.

BD14016STU Features


the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A


BD14016STU Applications


There are a lot of ON Semiconductor
BD14016STU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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