BD14016S

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Mfr.Part #
BD14016S
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 80V 1.5A TO126-3
Stock
3,572
In Stock :
3,572

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Voltage - Rated DC :
-80V
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 2V
Lead Free :
Lead Free
Package / Case :
TO-225AA, TO-126-3
Current - Collector Cutoff (Max) :
100nA ICBO
Max Power Dissipation :
1.25W
hFE Min :
40
Collector Base Voltage (VCBO) :
80V
Mount :
Through Hole
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
80V
ECCN Code :
EAR99
Transistor Type :
PNP
Collector Emitter Breakdown Voltage :
80V
RoHS Status :
ROHS3 Compliant
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Number of Pins :
3
Mounting Type :
Through Hole
Factory Lead Time :
19 Weeks
Number of Terminations :
3
Voltage :
45V
Packaging :
Bulk
Emitter Base Voltage (VEBO) :
5V
Current :
15A
Transistor Element Material :
SILICON
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Operating Temperature :
150°C TJ
REACH SVHC :
No SVHC
Base Part Number :
BD140
Collector Emitter Saturation Voltage :
-500mV
JESD-609 Code :
e3
Contact Plating :
Tin
Power Dissipation :
1.25W
Transistor Application :
SWITCHING
Max Collector Current :
1.5A
Current Rating :
-1.5A
Element Configuration :
Single
Pbfree Code :
yes
Weight :
760.986249mg
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
PNP
Introducing Transistors - Bipolar (BJT) - Single onsemi BD14016S from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Voltage:45V, Operating Temperature:150°C TJ, Base Part Number:BD140, BD14016S pinout, BD14016S datasheet PDF, BD14016S amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD14016S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD14016S


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

BD14016S Overview


This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1.5A.The maximum collector current is 1.5A volts.

BD14016S Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A


BD14016S Applications


There are a lot of ON Semiconductor
BD14016S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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