BD140-16
- Mfr.Part #
- BD140-16
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 1.5A SOT32
- Stock
- 4,900
- In Stock :
- 4,900
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Power Dissipation :
- 1.25W
- Polarity/Channel Type :
- PNP
- Current - Collector (Ic) (Max) :
- 1.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 80V
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 2V 150MA
- Max Collector Current :
- -3A
- Collector Emitter Voltage (VCEO) :
- -80V
- Package / Case :
- TO-225AA, TO-126-3
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 80V
- Height :
- 13.2mm
- REACH SVHC :
- No SVHC
- Packaging :
- Tube
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- -80V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Saturation Voltage :
- -500mV
- Emitter Base Voltage (VEBO) :
- -5V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 months ago)
- Number of Elements :
- 1
- Width :
- 2.7mm
- Factory Lead Time :
- 8 Weeks
- Transistor Element Material :
- SILICON
- Manufacturer Package Identifier :
- SOT-32-0016114E
- Transistor Type :
- PNP
- Max Junction Temperature (Tj) :
- 150°C
- Base Part Number :
- BD140
- Max Power Dissipation :
- 1.25W
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Mounting Type :
- Through Hole
- Length :
- 7.8mm
- hFE Min :
- 25
- Transition Frequency :
- 75MHz
- Datasheets
- BD140-16
BD140-16 Documents

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD140-16 Overview
DC current gain in this device equals 40 @ 2V 150MA, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at -5V to gain high efficiency.As a result, the part has a transition frequency of 75MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as -3A volts.
BD140-16 Features
the DC current gain for this device is 40 @ 2V 150MA
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 75MHz
BD140-16 Applications
There are a lot of STMicroelectronics
BD140-16 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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