BD140-16

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Number of Elements :

1

Contact Plating :

Tin

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

80V

Width :

2.7mm

Operating Temperature :

150°C TJ

Package / Case :

TO-225AA, TO-126-3

Mount :

Through Hole

Max Power Dissipation :

1.25W

Collector Emitter Breakdown Voltage :

80V

Max Junction Temperature (Tj) :

150°C

Transistor Application :

AMPLIFIER

Length :

7.8mm

Current - Collector (Ic) (Max) :

1.5A

Collector Base Voltage (VCBO) :

-80V

Mounting Type :

Through Hole

JESD-609 Code :

e3

Max Collector Current :

-3A

Base Part Number :

BD140

Polarity/Channel Type :

PNP

Number of Terminations :

3

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 2V 150MA

Lifecycle Status :

ACTIVE (Last Updated: 6 months ago)

Height :

13.2mm

Transistor Type :

PNP

Collector Emitter Saturation Voltage :

-500mV

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

hFE Min :

25

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

-5V

Power Dissipation :

1.25W

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Collector Emitter Voltage (VCEO) :

-80V

Manufacturer Package Identifier :

SOT-32-0016114E

REACH SVHC :

No SVHC

Packaging :

Tube

Transition Frequency :

75MHz

Current - Collector Cutoff (Max) :

100nA ICBO