BD140

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Polarity/Channel Type :

PNP

Case Connection :

Isolated

Collector Emitter Saturation Voltage :

500mV

Transistor Element Material :

SILICON

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Height :

10.8mm

Current - Collector (Ic) (Max) :

1.5A

Factory Lead Time :

8 Weeks

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Length :

7.8mm

Transition Frequency :

75MHz

Max Breakdown Voltage :

80V

Voltage - Rated DC :

-80V

Packaging :

Tube

Mount :

Through Hole

Emitter Base Voltage (VEBO) :

5V

Base Part Number :

BD140

Transistor Application :

AMPLIFIER

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Radiation Hardening :

No

Current Rating :

-1.5A

Weight :

4.535924g

Current - Collector Cutoff (Max) :

100nA ICBO

hFE Min :

40

Number of Terminations :

3

Max Collector Current :

3A

RoHS Status :

ROHS3 Compliant

Transistor Type :

PNP

Operating Temperature :

150°C TJ

Number of Elements :

1

Max Power Dissipation :

1.25W

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

80V

Collector Emitter Breakdown Voltage :

80V

Package / Case :

TO-225AA, TO-126-3

Collector Base Voltage (VCBO) :

80V

Power Dissipation :

1.25W

Width :

2.7mm

Lead Free :

Lead Free

JESD-609 Code :

e3