BD139G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

3

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

260

Width :

2.66mm

Voltage - Rated DC :

80V

ECCN Code :

EAR99

Radiation Hardening :

No

Number of Elements :

1

Package / Case :

TO-225AA, TO-126-3

Published :

1999

hFE Min :

25

Collector Emitter Voltage (VCEO) :

80V

Collector Emitter Saturation Voltage :

500mV

Max Power Dissipation :

1.25W

Pbfree Code :

yes

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Surface Mount :

No

Power Dissipation :

1.25W

Height :

11.04mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Packaging :

Bulk

Transistor Type :

NPN

Weight :

4.535924g

Current Rating :

1.5A

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

80V

Transistor Element Material :

SILICON

Pin Count :

3

Transistor Application :

AMPLIFIER

Number of Pins :

3

Max Collector Current :

1.5A

Polarity/Channel Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

40

Length :

7.74mm

Base Part Number :

BD139

Operating Temperature :

-55°C~150°C TJ

Current - Collector Cutoff (Max) :

100nA ICBO

Factory Lead Time :

9 Weeks

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Emitter Base Voltage (VEBO) :

5V

Collector Base Voltage (VCBO) :

80V