BD13916STU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Polarity/Channel Type :

NPN

Collector Emitter Saturation Voltage :

500mV

Base Part Number :

BD139

Package / Case :

TO-225AA, TO-126-3

Length :

8mm

Contact Plating :

Tin

REACH SVHC :

No SVHC

Published :

2011

Transistor Element Material :

SILICON

Radiation Hardening :

No

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

100nA ICBO

Operating Temperature :

150°C TJ

Max Collector Current :

1.5A

Current Rating :

1.5A

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Number of Terminations :

3

Number of Pins :

3

Factory Lead Time :

22 Weeks

Collector Emitter Voltage (VCEO) :

80V

Collector Base Voltage (VCBO) :

80V

hFE Min :

40

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

1.25W

Collector Emitter Breakdown Voltage :

80V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Voltage - Rated DC :

80V

JESD-609 Code :

e3

Mount :

Through Hole

Lead Free :

Lead Free

Transistor Type :

NPN

ECCN Code :

EAR99

Height :

11mm

Element Configuration :

Single

Packaging :

Tube

Emitter Base Voltage (VEBO) :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Width :

3.25mm

Weight :

761mg

Power Dissipation :

1.25W