BD13916S
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- Mfr.Part #
- BD13916S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 1.5A TO126-3
- Stock
- 1,901
- In Stock ：
- 1,901
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Base Part Number :
- BD139
- Collector Emitter Saturation Voltage :
- 500mV
- Transistor Type :
- NPN
- Max Collector Current :
- 1.5A
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Termination :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 11mm
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Qualification Status :
- Not Qualified
- Mount :
- Through Hole
- Max Power Dissipation :
- 1.25W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-225AA, TO-126-3
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Packaging :
- Bulk
- Voltage - Rated DC :
- 80V
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.25W
- Collector Emitter Voltage (VCEO) :
- 80V
- Length :
- 8mm
- hFE Min :
- 40
- JESD-609 Code :
- e3
- Current Rating :
- 1.5A
- Collector Emitter Breakdown Voltage :
- 80V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Weight :
- 761mg
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 80V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Published :
- 2013
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 22 Weeks
- RoHS Status :
- ROHS3 Compliant
- Width :
- 3.25mm
- Element Configuration :
- Single
- Datasheets
- BD13916S
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD13916S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
BD13916S Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
BD13916S Applications
There are a lot of ON Semiconductor
BD13916S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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