BD13910S

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Mfr.Part #
BD13910S
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 80V 1.5A TO126-3
Stock
9,005
In Stock :
9,005

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Mount :
Through Hole
Max Collector Current :
1.5A
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Package / Case :
TO-225AA, TO-126-3
Transistor Application :
SWITCHING
Current - Collector Cutoff (Max) :
100nA ICBO
Collector Base Voltage (VCBO) :
80V
Number of Elements :
1
Number of Terminations :
3
Emitter Base Voltage (VEBO) :
5V
Pbfree Code :
yes
JESD-609 Code :
e3
Mounting Type :
Through Hole
Element Configuration :
Single
Transistor Type :
NPN
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Number of Pins :
3
Power Dissipation :
1.25W
Collector Emitter Breakdown Voltage :
80V
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
80V
Current Rating :
1.5A
Transistor Element Material :
SILICON
Collector Emitter Saturation Voltage :
500mV
Max Power Dissipation :
1.25W
Weight :
761mg
Published :
2013
Factory Lead Time :
6 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Packaging :
Bulk
Contact Plating :
Tin
Operating Temperature :
150°C TJ
Voltage - Rated DC :
80V
hFE Min :
40
Transition Frequency :
250MHz
Base Part Number :
BD139
DC Current Gain (hFE) (Min) @ Ic, Vce :
63 @ 150mA 2V
Polarity/Channel Type :
NPN
Datasheets
BD13910S
Introducing Transistors - Bipolar (BJT) - Single onsemi BD13910S from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:150°C TJ, Base Part Number:BD139, BD13910S pinout, BD13910S datasheet PDF, BD13910S amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD13910S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD13910S


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

BD13910S Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.5A.A transition frequency of 250MHz is present in the part.Collector current can be as low as 1.5A volts at its maximum.

BD13910S Features


the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 250MHz


BD13910S Applications


There are a lot of ON Semiconductor
BD13910S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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