BD139

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current Rating :

1.5A

Element Configuration :

Single

Max Power Dissipation :

1.25W

Collector Base Voltage (VCBO) :

80V

Transition Frequency :

250MHz

Collector Emitter Saturation Voltage :

500mV

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Operating Temperature :

150°C TJ

Package / Case :

TO-225AA, TO-126-3

Pin Count :

3

RoHS Status :

ROHS3 Compliant

hFE Min :

40

Number of Pins :

3

Radiation Hardening :

No

Weight :

90.718474mg

Max Collector Current :

1.5A

Transistor Type :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Number of Elements :

1

Polarity/Channel Type :

NPN

Voltage - Rated DC :

80V

Height :

13.2mm

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

5V

Contact Plating :

Tin

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

100nA ICBO

Manufacturer Package Identifier :

SOT-32-0016114E

Power Dissipation :

1.25W

Collector Emitter Voltage (VCEO) :

80V

REACH SVHC :

No SVHC

Width :

2.9mm

Transistor Application :

AMPLIFIER

Mount :

Through Hole

Mounting Type :

Through Hole

Packaging :

Tube

Case Connection :

Isolated

Base Part Number :

BD139

Collector Emitter Breakdown Voltage :

80V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Max Junction Temperature (Tj) :

150°C

Transistor Element Material :

SILICON

Length :

7.8mm