BD1386S

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Mfr.Part #
BD1386S
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 60V 1.5A TO126-3
Stock
40,518
In Stock :
40,518

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
PNP
Operating Temperature :
150°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 2V
Mounting Type :
Through Hole
Power - Max :
1.25W
Voltage - Collector Emitter Breakdown (Max) :
60V
Base Part Number :
BD138
Current - Collector Cutoff (Max) :
100nA ICBO
Package / Case :
TO-225AA, TO-126-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector (Ic) (Max) :
1.5A
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Packaging :
Bulk
Datasheets
BD1386S
Introducing Transistors - Bipolar (BJT) - Single onsemi BD1386S from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Through Hole, Base Part Number:BD138, Package / Case:TO-225AA, TO-126-3, BD1386S pinout, BD1386S datasheet PDF, BD1386S amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD1386S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD1386S


PNP 150°C TJ 100nA ICBO TO-225AA, TO-126-3 Bulk Through Hole

BD1386S Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.This device displays a 60V maximum voltage - Collector Emitter Breakdown.

BD1386S Features


the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA


BD1386S Applications


There are a lot of ON Semiconductor
BD1386S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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