BD13816S

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Mfr.Part #
BD13816S
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 60V 1.5A TO126-3
Stock
5,633
In Stock :
5,633

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Finish :
Tin (Sn)
Base Part Number :
BD138
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Voltage - Rated DC :
-60V
hFE Min :
40
Operating Temperature :
150°C TJ
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Element Configuration :
Single
Number of Elements :
1
Pbfree Code :
yes
Mounting Type :
Through Hole
Lifecycle Status :
OBSOLETE (Last Updated: 1 day ago)
ECCN Code :
EAR99
Max Collector Current :
1.5A
Current Rating :
-1.5A
Packaging :
Bulk
Collector Emitter Breakdown Voltage :
60V
Transistor Type :
PNP
Current - Collector Cutoff (Max) :
100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 2V
Polarity/Channel Type :
PNP
Transistor Application :
SWITCHING
Max Power Dissipation :
1.25W
Package / Case :
TO-225AA, TO-126-3
Emitter Base Voltage (VEBO) :
-5V
Collector Emitter Saturation Voltage :
-500mV
Mount :
Through Hole
Collector Base Voltage (VCBO) :
-60V
Number of Pins :
3
Lead Free :
Lead Free
Power Dissipation :
1.25W
JESD-609 Code :
e3
Weight :
761mg
Collector Emitter Voltage (VCEO) :
60V
Transistor Element Material :
SILICON
RoHS Status :
RoHS Compliant
Datasheets
BD13816S
Introducing Transistors - Bipolar (BJT) - Single onsemi BD13816S from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BD138, Number of Terminations:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, Number of Pins:3, BD13816S pinout, BD13816S datasheet PDF, BD13816S amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD13816S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD13816S


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

BD13816S Overview


In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1.5A for this device.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.

BD13816S Features


the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A


BD13816S Applications


There are a lot of ON Semiconductor
BD13816S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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