BD13810S

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Mfr.Part #
BD13810S
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 60V 1.5A TO126-3
Stock
45,317
In Stock :
45,317

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Power - Max :
1.25W
Transistor Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pbfree Code :
yes
Transistor Application :
SWITCHING
ECCN Code :
EAR99
JESD-609 Code :
e3
Reach Compliance Code :
Compliant
Operating Temperature :
150°C TJ
Power Dissipation-Max (Abs) :
13W
Surface Mount :
No
Number of Elements :
1
Configuration :
Single
HTS Code :
8541.29.00.95
JESD-30 Code :
R-PSFM-T3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Through Hole
Terminal Finish :
Tin (Sn)
Terminal Position :
Single
Transistor Element Material :
SILICON
DC Current Gain (hFE) (Min) @ Ic, Vce :
63 @ 150mA 2V
Transition Frequency :
75MHz
Polarity/Channel Type :
PNP
Current - Collector Cutoff (Max) :
100nA ICBO
Voltage - Collector Emitter Breakdown (Max) :
60V
Package / Case :
TO-225AA, TO-126-3
Number of Terminations :
3
Packaging :
Bulk
Current - Collector (Ic) (Max) :
1.5A
Qualification Status :
Not Qualified
Base Part Number :
BD138
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
BD13810S
Introducing Transistors - Bipolar (BJT) - Single onsemi BD13810S from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Base Part Number:BD138, BD13810S pinout, BD13810S datasheet PDF, BD13810S amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD13810S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD13810S


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

BD13810S Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 63 @ 150mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Parts of this part have transition frequencies of 75MHz.This device displays a 60V maximum voltage - Collector Emitter Breakdown.

BD13810S Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 75MHz


BD13810S Applications


There are a lot of ON Semiconductor
BD13810S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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