BD13716STU
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- Mfr.Part #
- BD13716STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 1.5A TO126-3
- Stock
- 408
- In Stock ：
- 408
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 1.25W
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Package / Case :
- TO-225AA, TO-126-3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Pbfree Code :
- yes
- Height :
- 11mm
- Power Dissipation :
- 1.25W
- hFE Min :
- 40
- Current Rating :
- 1.5A
- Max Collector Current :
- 1.5A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Qualification Status :
- Not Qualified
- Collector Emitter Saturation Voltage :
- 500mV
- Published :
- 2000
- Length :
- 8mm
- Contact Plating :
- Tin
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 60V
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Width :
- 3.25mm
- Factory Lead Time :
- 6 Weeks
- Voltage - Rated DC :
- 60V
- Base Part Number :
- BD137
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Weight :
- 761mg
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Datasheets
- BD13716STU
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD13716STU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.5A.Collector current can be as low as 1.5A volts at its maximum.
BD13716STU Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
BD13716STU Applications
There are a lot of ON Semiconductor
BD13716STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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