BD13710STU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

1.25W

Contact Plating :

Tin

Collector Emitter Breakdown Voltage :

60V

Collector Base Voltage (VCBO) :

60V

Transistor Element Material :

SILICON

Factory Lead Time :

6 Weeks

Operating Temperature :

150°C TJ

Package / Case :

TO-225AA, TO-126-3

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

5V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

500mV

Lifecycle Status :

ACTIVE (Last Updated: 2 months ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Number of Terminations :

3

Pbfree Code :

yes

Polarity/Channel Type :

NPN

Transistor Application :

SWITCHING

hFE Min :

40

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Weight :

761mg

Packaging :

Tube

Mount :

Through Hole

Published :

2013

Current Rating :

1.5A

Collector Emitter Voltage (VCEO) :

60V

Number of Pins :

3

Max Power Dissipation :

1.25W

Number of Elements :

1

Voltage - Rated DC :

60V

Radiation Hardening :

No

Element Configuration :

Single

Mounting Type :

Through Hole

Base Part Number :

BD137

REACH SVHC :

No SVHC

Transition Frequency :

250MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Lead Free :

Lead Free

ECCN Code :

EAR99

Max Collector Current :

1.5A