BD13616STU

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Mfr.Part #
BD13616STU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 45V 1.5A TO126-3
Stock
23,871
In Stock :
23,871

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
Number of Pins :
3
Radiation Hardening :
No
Factory Lead Time :
19 Weeks
Power Dissipation :
1.25W
Pbfree Code :
yes
Max Collector Current :
1.5A
Current - Collector Cutoff (Max) :
100nA ICBO
Collector Base Voltage (VCBO) :
-45V
Emitter Base Voltage (VEBO) :
-5V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Polarity/Channel Type :
PNP
Number of Elements :
1
Operating Temperature :
150°C TJ
Contact Plating :
Tin
REACH SVHC :
No SVHC
Element Configuration :
Single
Mount :
Through Hole
Width :
3.25mm
Length :
8mm
Transistor Application :
SWITCHING
Collector Emitter Saturation Voltage :
-500mV
Number of Terminations :
3
Collector Emitter Breakdown Voltage :
350V
JESD-609 Code :
e3
Height :
11mm
Published :
2000
Current Rating :
-1.5A
Transistor Type :
PNP
ECCN Code :
EAR99
Weight :
761mg
Voltage - Rated DC :
-45V
Base Part Number :
BD136
Package / Case :
TO-225AA, TO-126-3
Max Breakdown Voltage :
45V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 2V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Lead Free :
Lead Free
hFE Min :
40
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
12.5W
Collector Emitter Voltage (VCEO) :
45V
Transition Frequency :
75MHz
Datasheets
BD13616STU
Introducing Transistors - Bipolar (BJT) - Single onsemi BD13616STU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:150°C TJ, Number of Terminations:3, Base Part Number:BD136, Package / Case:TO-225AA, TO-126-3, BD13616STU pinout, BD13616STU datasheet PDF, BD13616STU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD13616STU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD13616STU


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole

BD13616STU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 75MHz.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.

BD13616STU Features


the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
a transition frequency of 75MHz


BD13616STU Applications


There are a lot of ON Semiconductor
BD13616STU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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