BD13610STU
- Mfr.Part #
- BD13610STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 1.5A TO126-3
- Stock
- 10,113
- In Stock :
- 10,113
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Max Collector Current :
- 1.5A
- Transition Frequency :
- 75MHz
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 45V
- Height :
- 11mm
- Number of Terminations :
- 3
- Current Rating :
- -1.5A
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 400V
- Max Power Dissipation :
- 1.25W
- Published :
- 2000
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Weight :
- 761mg
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Base Part Number :
- BD136
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Length :
- 8mm
- Collector Base Voltage (VCBO) :
- -45V
- Power Dissipation :
- 1.25W
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- -5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 45V
- hFE Min :
- 40
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- -500mV
- Width :
- 3.25mm
- Voltage - Rated DC :
- -45V
- Factory Lead Time :
- 6 Weeks
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Polarity/Channel Type :
- PNP
- Contact Plating :
- Tin
- Package / Case :
- TO-225AA, TO-126-3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- PNP
- Datasheets
- BD13610STU

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD13610STU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1.5A.In the part, the transition frequency is 75MHz.This device can take an input voltage of 400V volts before it breaks down.A maximum collector current of 1.5A volts can be achieved.
BD13610STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
a transition frequency of 75MHz
BD13610STU Applications
There are a lot of ON Semiconductor
BD13610STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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