BD136

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Number of Terminations :

3

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

45V

Transition Frequency :

75MHz

Collector Emitter Saturation Voltage :

500mV

Packaging :

Tube

Emitter Base Voltage (VEBO) :

5V

Polarity/Channel Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

hFE Min :

25

Case Connection :

Isolated

Transistor Type :

PNP

Max Collector Current :

1.5A

Height :

10.8mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Number of Pins :

3

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Element Configuration :

Single

Length :

7.8mm

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

100nA ICBO

Mount :

Through Hole

Max Power Dissipation :

1.25W

Package / Case :

TO-225AA, TO-126-3

Max Breakdown Voltage :

45V

Width :

2.7mm

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Contact Plating :

Tin

Power Dissipation :

1.25W

Collector Emitter Breakdown Voltage :

45V

Collector Emitter Voltage (VCEO) :

45V

Factory Lead Time :

8 Weeks

Number of Elements :

1

Base Part Number :

BD136

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 2V 150MA

ECCN Code :

EAR99