BC847C

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Single

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-G3

Reach Compliance Code :

Compliant

Polarity :

NPN

Termination :

SMD/SMT

Power Dissipation-Max (Abs) :

0.31 W

JEDEC-95 Code :

TO-236

Collector Current-Max (IC) :

0.1 A

Number of Terminals :

3

DC Current Gain-Min (hFE) :

420

Max Junction Temperature (Tj) :

150 °C

Subcategory :

Other Transistors

ECCN Code :

EAR99

Power Dissipation :

250 mW

Number of Pins :

3

Current :

1 A

Manufacturer :

Diotec Semiconductor AG

Pin Count :

3

Gain Bandwidth Product :

100 MHz

Max Power Dissipation :

250 mW

Terminal Finish :

Matte Tin (Sn) - annealed

Voltage :

45 V

RoHS :

Compliant

Max Operating Temperature :

150 °C

Collector Emitter Breakdown Voltage :

45 V

hFE Min :

110

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

200 mV

Polarity/Channel Type :

NPN

Collector Base Voltage (VCBO) :

50 V

Package Shape :

RECTANGULAR

Number of Elements :

1

JESD-609 Code :

e3

Terminal Form :

Gull wing

Mount :

Reverse

Emitter Base Voltage (VEBO) :

6 V

HTS Code :

8541.21.00

Collector-Emitter Voltage-Max :

45 V

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

45 V

Ambient Temperature Range High :

150 °C

Configuration :

Single

Terminal Position :

Dual

Height :

1.1 mm

Max Collector Current :

100 mA

Surface Mount :

yes

Transition Frequency :

100 MHz

Min Operating Temperature :

-65 °C