BC846A
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- Mfr.Part #
- BC846A
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 44,882
- In Stock ：
- 44,882
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Additional Feature :
- High Reliability
- Emitter Base Voltage (VEBO) :
- 6V
- Frequency :
- 300MHz
- Current - Collector Cutoff (Max) :
- 15nA
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Contact Plating :
- Tin
- Max Junction Temperature (Tj) :
- 150°C
- Power Dissipation :
- 310mW
- Collector Emitter Saturation Voltage :
- 200mV
- Published :
- 2011
- Terminal Form :
- Gull wing
- Max Collector Current :
- 100mA
- Max Breakdown Voltage :
- 65V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 1.4mm
- hFE Min :
- 200
- Collector Base Voltage (VCBO) :
- 80V
- Polarity/Channel Type :
- NPN
- Height :
- 1.1mm
- Number of Pins :
- 3
- Weight :
- 7.994566mg
- Collector Emitter Breakdown Voltage :
- 65V
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 65V
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 15 Weeks
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -65°C~150°C TJ
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 300mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gain Bandwidth Product :
- 300MHz
- Length :
- 3.05mm
- Transition Frequency :
- 300MHz
- Base Part Number :
- BC846
- Pbfree Code :
- yes
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Radiation Hardening :
- No
- Datasheets
- BC846A
BC846A Documents
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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