BC846A
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- Mfr.Part #
- BC846A
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 44,882
- In Stock ：
- 44,882
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 65V
- Collector Base Voltage (VCBO) :
- 80V
- Operating Temperature :
- -65°C~150°C TJ
- Additional Feature :
- High Reliability
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- Max Collector Current :
- 100mA
- Width :
- 1.4mm
- Pin Count :
- 3
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 65V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- REACH SVHC :
- No SVHC
- hFE Min :
- 200
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 15 Weeks
- Max Power Dissipation :
- 300mW
- Element Configuration :
- Single
- Weight :
- 7.994566mg
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Power Dissipation :
- 310mW
- Published :
- 2011
- Transition Frequency :
- 300MHz
- Base Part Number :
- BC846
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Mounting Type :
- Surface Mount
- Max Junction Temperature (Tj) :
- 150°C
- Height :
- 1.1mm
- Collector Emitter Saturation Voltage :
- 200mV
- Frequency :
- 300MHz
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 15nA
- Length :
- 3.05mm
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Gain Bandwidth Product :
- 300MHz
- Polarity/Channel Type :
- NPN
- Max Breakdown Voltage :
- 65V
- Terminal Position :
- Dual
- Datasheets
- BC846A
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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