BC846A
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- Mfr.Part #
- BC846A
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 44,882
- In Stock ：
- 44,882
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- BC846
- Number of Terminations :
- 3
- hFE Min :
- 200
- Transition Frequency :
- 300MHz
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 80V
- Max Breakdown Voltage :
- 65V
- Length :
- 3.05mm
- Height :
- 1.1mm
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Max Junction Temperature (Tj) :
- 150°C
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Breakdown Voltage :
- 65V
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 300MHz
- Weight :
- 7.994566mg
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 15nA
- Power Dissipation :
- 310mW
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 200mV
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Operating Temperature :
- -65°C~150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 2011
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 6V
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 65V
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Max Collector Current :
- 100mA
- Max Power Dissipation :
- 300mW
- Frequency :
- 300MHz
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Additional Feature :
- High Reliability
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Width :
- 1.4mm
- Datasheets
- BC846A
BC846A Documents
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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