BC846A
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- Mfr.Part #
- BC846A
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 44,882
- In Stock ：
- 44,882
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Frequency :
- 300MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Gain Bandwidth Product :
- 300MHz
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Height :
- 1.1mm
- Width :
- 1.4mm
- Terminal Position :
- Dual
- Transition Frequency :
- 300MHz
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 200mV
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 65V
- Base Part Number :
- BC846
- Operating Temperature :
- -65°C~150°C TJ
- Max Junction Temperature (Tj) :
- 150°C
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 65V
- Max Collector Current :
- 100mA
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Weight :
- 7.994566mg
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 310mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Length :
- 3.05mm
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 65V
- Additional Feature :
- High Reliability
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 15nA
- hFE Min :
- 200
- Published :
- 2011
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Max Power Dissipation :
- 300mW
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 15 Weeks
- Datasheets
- BC846A
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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