BC846A
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- Mfr.Part #
- BC846A
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 44,882
- In Stock ：
- 44,882
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 3.05mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Saturation Voltage :
- 200mV
- Additional Feature :
- High Reliability
- Power Dissipation :
- 310mW
- Collector Base Voltage (VCBO) :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Base Part Number :
- BC846
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Weight :
- 7.994566mg
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 65V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 200
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 65V
- Max Power Dissipation :
- 300mW
- Number of Pins :
- 3
- Element Configuration :
- Single
- Number of Elements :
- 1
- Frequency :
- 300MHz
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Max Collector Current :
- 100mA
- Gain Bandwidth Product :
- 300MHz
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 15nA
- Radiation Hardening :
- No
- Operating Temperature :
- -65°C~150°C TJ
- Factory Lead Time :
- 15 Weeks
- Max Breakdown Voltage :
- 65V
- Max Junction Temperature (Tj) :
- 150°C
- ECCN Code :
- EAR99
- Published :
- 2011
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Transition Frequency :
- 300MHz
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.1mm
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Width :
- 1.4mm
- Datasheets
- BC846A
BC846A Documents
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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