BC846A
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- Mfr.Part #
- BC846A
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 44,882
- In Stock ：
- 44,882
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 300mW
- Length :
- 3.05mm
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 200
- Pin Count :
- 3
- Base Part Number :
- BC846
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 65V
- Additional Feature :
- High Reliability
- Factory Lead Time :
- 15 Weeks
- Published :
- 2011
- Transition Frequency :
- 300MHz
- Gain Bandwidth Product :
- 300MHz
- Power Dissipation :
- 310mW
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Operating Temperature :
- -65°C~150°C TJ
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 65V
- Height :
- 1.1mm
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 200mV
- Terminal Position :
- Dual
- Width :
- 1.4mm
- Collector Emitter Voltage (VCEO) :
- 65V
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Max Junction Temperature (Tj) :
- 150°C
- Collector Base Voltage (VCBO) :
- 80V
- Number of Pins :
- 3
- Frequency :
- 300MHz
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Max Collector Current :
- 100mA
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Weight :
- 7.994566mg
- Current - Collector Cutoff (Max) :
- 15nA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Datasheets
- BC846A
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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