BC846A
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- Mfr.Part #
- BC846A
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 44,882
- In Stock ：
- 44,882
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 300MHz
- REACH SVHC :
- No SVHC
- Height :
- 1.1mm
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 80V
- Max Collector Current :
- 100mA
- Transition Frequency :
- 300MHz
- Additional Feature :
- High Reliability
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 15nA
- Radiation Hardening :
- No
- Weight :
- 7.994566mg
- Mounting Type :
- Surface Mount
- Length :
- 3.05mm
- Collector Emitter Voltage (VCEO) :
- 65V
- Transistor Type :
- NPN
- Width :
- 1.4mm
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 200mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Power Dissipation :
- 310mW
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Lead Free :
- Lead Free
- Factory Lead Time :
- 15 Weeks
- hFE Min :
- 200
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BC846
- Number of Pins :
- 3
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 65V
- Published :
- 2011
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Application :
- SWITCHING
- Max Junction Temperature (Tj) :
- 150°C
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 65V
- Mount :
- Surface Mount
- Max Power Dissipation :
- 300mW
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 300MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Operating Temperature :
- -65°C~150°C TJ
- Datasheets
- BC846A
BC846A Documents
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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