BC846A
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- Mfr.Part #
- BC846A
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 44,882
- In Stock ：
- 44,882
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Height :
- 1.1mm
- Emitter Base Voltage (VEBO) :
- 6V
- hFE Min :
- 200
- Additional Feature :
- High Reliability
- Gain Bandwidth Product :
- 300MHz
- Factory Lead Time :
- 15 Weeks
- Pin Count :
- 3
- Length :
- 3.05mm
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Published :
- 2011
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Width :
- 1.4mm
- Base Part Number :
- BC846
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 80V
- Max Junction Temperature (Tj) :
- 150°C
- Max Power Dissipation :
- 300mW
- Operating Temperature :
- -65°C~150°C TJ
- Frequency :
- 300MHz
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 15nA
- Weight :
- 7.994566mg
- Radiation Hardening :
- No
- Transition Frequency :
- 300MHz
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 65V
- Number of Pins :
- 3
- Max Collector Current :
- 100mA
- Power Dissipation :
- 310mW
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 200mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 65V
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 65V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Datasheets
- BC846A
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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