BC846A
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- Mfr.Part #
- BC846A
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 44,882
- In Stock ：
- 44,882
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 1.4mm
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 300MHz
- Max Junction Temperature (Tj) :
- 150°C
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 300mW
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Base Part Number :
- BC846
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 100mA
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Weight :
- 7.994566mg
- Length :
- 3.05mm
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 80V
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 310mW
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.1mm
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 65V
- Current - Collector Cutoff (Max) :
- 15nA
- Frequency :
- 300MHz
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Emitter Base Voltage (VEBO) :
- 6V
- Additional Feature :
- High Reliability
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Collector Emitter Breakdown Voltage :
- 65V
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 200mV
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 15 Weeks
- Operating Temperature :
- -65°C~150°C TJ
- Transition Frequency :
- 300MHz
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Published :
- 2011
- hFE Min :
- 200
- Collector Emitter Voltage (VCEO) :
- 65V
- Datasheets
- BC846A
BC846A Documents
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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