BC846A
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- Mfr.Part #
- BC846A
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 44,882
- In Stock ：
- 44,882
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Published :
- 2011
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Weight :
- 7.994566mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 15nA
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- hFE Min :
- 200
- Emitter Base Voltage (VEBO) :
- 6V
- Additional Feature :
- High Reliability
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 80V
- Length :
- 3.05mm
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Number of Pins :
- 3
- Power Dissipation :
- 310mW
- Transistor Type :
- NPN
- Frequency :
- 300MHz
- Transistor Element Material :
- SILICON
- Base Part Number :
- BC846
- Operating Temperature :
- -65°C~150°C TJ
- Transition Frequency :
- 300MHz
- Max Power Dissipation :
- 300mW
- Height :
- 1.1mm
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 65V
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 65V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Contact Plating :
- Tin
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 300MHz
- Max Collector Current :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 65V
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Junction Temperature (Tj) :
- 150°C
- Width :
- 1.4mm
- Collector Emitter Saturation Voltage :
- 200mV
- Datasheets
- BC846A
BC846A Documents
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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