BC846A
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- Mfr.Part #
- BC846A
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 44,882
- In Stock ：
- 44,882
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Frequency :
- 300MHz
- Max Breakdown Voltage :
- 65V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transistor Element Material :
- SILICON
- Height :
- 1.1mm
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Number of Elements :
- 1
- Width :
- 1.4mm
- JESD-609 Code :
- e3
- Power Dissipation :
- 310mW
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 300MHz
- Collector Emitter Breakdown Voltage :
- 65V
- Number of Terminations :
- 3
- Weight :
- 7.994566mg
- Collector Emitter Voltage (VCEO) :
- 65V
- Published :
- 2011
- Transistor Type :
- NPN
- hFE Min :
- 200
- Current - Collector Cutoff (Max) :
- 15nA
- Transition Frequency :
- 300MHz
- Operating Temperature :
- -65°C~150°C TJ
- Max Power Dissipation :
- 300mW
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 200mV
- Collector Base Voltage (VCBO) :
- 80V
- Max Junction Temperature (Tj) :
- 150°C
- Max Collector Current :
- 100mA
- Radiation Hardening :
- No
- Factory Lead Time :
- 15 Weeks
- Pin Count :
- 3
- Additional Feature :
- High Reliability
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Length :
- 3.05mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Base Part Number :
- BC846
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- BC846A
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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