BC846A-7-F
- Mfr.Part #
- BC846A-7-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 60,296
- In Stock :
- 60,296
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 200mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Application :
- SWITCHING
- Height :
- 1.1mm
- Current - Collector Cutoff (Max) :
- 15nA
- Published :
- 2011
- hFE Min :
- 200
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Junction Temperature (Tj) :
- 150°C
- Weight :
- 7.994566mg
- Factory Lead Time :
- 15 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 300MHz
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Length :
- 3.05mm
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 65V
- ECCN Code :
- EAR99
- Power Dissipation :
- 310mW
- Polarity/Channel Type :
- NPN
- Base Part Number :
- BC846
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -65°C~150°C TJ
- Max Power Dissipation :
- 300mW
- Collector Emitter Voltage (VCEO) :
- 65V
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Width :
- 1.4mm
- Transition Frequency :
- 300MHz
- Contact Plating :
- Tin
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Max Collector Current :
- 100mA
- Emitter Base Voltage (VEBO) :
- 6V
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Additional Feature :
- High Reliability
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 300MHz
- Max Breakdown Voltage :
- 65V
- Datasheets
- BC846A-7-F

NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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