BC846A
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- Mfr.Part #
- BC846A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 77,519
- In Stock ：
- 77,519
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 100mA
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 300MHz
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 80V
- Pbfree Code :
- yes
- Weight :
- 7.994566mg
- Max Breakdown Voltage :
- 65V
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 65V
- Current - Collector Cutoff (Max) :
- 15nA
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Power Dissipation :
- 310mW
- Lead Free :
- Lead Free
- Max Junction Temperature (Tj) :
- 150°C
- Frequency :
- 300MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.1mm
- Width :
- 1.4mm
- Additional Feature :
- High Reliability
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 300mW
- Number of Pins :
- 3
- Base Part Number :
- BC846
- Published :
- 2011
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Operating Temperature :
- -65°C~150°C TJ
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Voltage (VCEO) :
- 65V
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 200mV
- Element Configuration :
- Single
- Transition Frequency :
- 300MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 200
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- RoHS Status :
- ROHS3 Compliant
- Length :
- 3.05mm
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Datasheets
- BC846A
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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