BC846A
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- Mfr.Part #
- BC846A
- Manufacturer
- MDD
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23
- Stock
- 9,000
- In Stock ：
- 9,000
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- Manufacturer :
- MDD
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Additional Feature :
- High Reliability
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 300mW
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 80V
- Frequency :
- 300MHz
- JESD-609 Code :
- e3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 300MHz
- Collector Emitter Voltage (VCEO) :
- 65V
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Published :
- 2011
- Number of Elements :
- 1
- hFE Min :
- 200
- Operating Temperature :
- -65°C~150°C TJ
- Lead Free :
- Lead Free
- Height :
- 1.1mm
- ECCN Code :
- EAR99
- Factory Lead Time :
- 15 Weeks
- Pin Count :
- 3
- Max Breakdown Voltage :
- 65V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Weight :
- 7.994566mg
- Gain Bandwidth Product :
- 300MHz
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Max Junction Temperature (Tj) :
- 150°C
- Max Collector Current :
- 100mA
- Power Dissipation :
- 310mW
- Collector Emitter Saturation Voltage :
- 200mV
- Length :
- 3.05mm
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Base Part Number :
- BC846
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 65V
- Emitter Base Voltage (VEBO) :
- 6V
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 15nA
- Width :
- 1.4mm
- Datasheets
- BC846A
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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