BC846A
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- Mfr.Part #
- BC846A
- Manufacturer
- MDD
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23
- Stock
- 9,000
- In Stock ：
- 9,000
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- Manufacturer :
- MDD
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Breakdown Voltage :
- 65V
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 65V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 7.994566mg
- Collector Emitter Voltage (VCEO) :
- 65V
- Width :
- 1.4mm
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- Max Junction Temperature (Tj) :
- 150°C
- Frequency :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 15 Weeks
- Transistor Type :
- NPN
- Height :
- 1.1mm
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Length :
- 3.05mm
- Operating Temperature :
- -65°C~150°C TJ
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 300MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Max Power Dissipation :
- 300mW
- hFE Min :
- 200
- Transition Frequency :
- 300MHz
- Power Dissipation :
- 310mW
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- High Reliability
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 15nA
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Published :
- 2011
- Collector Emitter Saturation Voltage :
- 200mV
- Base Part Number :
- BC846
- Contact Plating :
- Tin
- Max Collector Current :
- 100mA
- Datasheets
- BC846A
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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