BC846A
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- Mfr.Part #
- BC846A
- Manufacturer
- MDD
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23
- Stock
- 9,000
- In Stock ：
- 9,000
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- Manufacturer :
- MDD
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 200mV
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Factory Lead Time :
- 15 Weeks
- Width :
- 1.4mm
- Contact Plating :
- Tin
- Max Junction Temperature (Tj) :
- 150°C
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 100mA
- Max Power Dissipation :
- 300mW
- Weight :
- 7.994566mg
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 65V
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Length :
- 3.05mm
- JESD-609 Code :
- e3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Height :
- 1.1mm
- Transition Frequency :
- 300MHz
- Additional Feature :
- High Reliability
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Published :
- 2011
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 65V
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 300MHz
- hFE Min :
- 200
- Operating Temperature :
- -65°C~150°C TJ
- Base Part Number :
- BC846
- Collector Emitter Breakdown Voltage :
- 65V
- Pin Count :
- 3
- Element Configuration :
- Single
- Power Dissipation :
- 310mW
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Frequency :
- 300MHz
- Collector Base Voltage (VCBO) :
- 80V
- Current - Collector Cutoff (Max) :
- 15nA
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Datasheets
- BC846A
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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