BC846A
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- Mfr.Part #
- BC846A
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SOT-23 NPN 0.2W 0.1A 80V Transis
- Stock
- 15,000
- In Stock ：
- 15,000
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 65V
- Collector Emitter Saturation Voltage :
- 200mV
- hFE Min :
- 200
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Breakdown Voltage :
- 65V
- Length :
- 3.05mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Additional Feature :
- High Reliability
- Current - Collector Cutoff (Max) :
- 15nA
- Max Power Dissipation :
- 300mW
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Frequency :
- 300MHz
- Number of Terminations :
- 3
- Transition Frequency :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Polarity/Channel Type :
- NPN
- Width :
- 1.4mm
- ECCN Code :
- EAR99
- Factory Lead Time :
- 15 Weeks
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -65°C~150°C TJ
- Published :
- 2011
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 80V
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Base Part Number :
- BC846
- Terminal Form :
- Gull wing
- Height :
- 1.1mm
- Max Collector Current :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 7.994566mg
- Contact Plating :
- Tin
- Max Junction Temperature (Tj) :
- 150°C
- Terminal Position :
- Dual
- Power Dissipation :
- 310mW
- Collector Emitter Voltage (VCEO) :
- 65V
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 300MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Datasheets
- BC846A
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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