BC846A
- Mfr.Part #
- BC846A
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SOT-23 NPN 0.2W 0.1A 80V Transis
- Stock
- 15,000
- In Stock :
- 15,000
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 15nA
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 3
- Factory Lead Time :
- 15 Weeks
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- 80V
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 300mW
- Collector Emitter Saturation Voltage :
- 200mV
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- hFE Min :
- 200
- Base Part Number :
- BC846
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 65V
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 65V
- Power Dissipation :
- 310mW
- Length :
- 3.05mm
- Operating Temperature :
- -65°C~150°C TJ
- Max Breakdown Voltage :
- 65V
- Additional Feature :
- High Reliability
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Weight :
- 7.994566mg
- Height :
- 1.1mm
- Width :
- 1.4mm
- Transition Frequency :
- 300MHz
- Published :
- 2011
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Max Collector Current :
- 100mA
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Gain Bandwidth Product :
- 300MHz
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Max Junction Temperature (Tj) :
- 150°C
- Frequency :
- 300MHz
- Datasheets
- BC846A
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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