BC846A
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- Mfr.Part #
- BC846A
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 44,882
- In Stock ：
- 44,882
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 65V
- Max Collector Current :
- 100mA
- Collector Emitter Saturation Voltage :
- 200mV
- Length :
- 3.05mm
- Number of Terminations :
- 3
- Weight :
- 7.994566mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 300mW
- Frequency :
- 300MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Max Junction Temperature (Tj) :
- 150°C
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 15nA
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 300MHz
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Published :
- 2011
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 1.1mm
- Contact Plating :
- Tin
- Operating Temperature :
- -65°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transition Frequency :
- 300MHz
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 65V
- Pin Count :
- 3
- Base Part Number :
- BC846
- Collector Emitter Breakdown Voltage :
- 65V
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Factory Lead Time :
- 15 Weeks
- hFE Min :
- 200
- Additional Feature :
- High Reliability
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Width :
- 1.4mm
- Power Dissipation :
- 310mW
- Terminal Form :
- Gull wing
- Datasheets
- BC846A
BC846A Documents
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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