BC846A
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- Mfr.Part #
- BC846A
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 44,882
- In Stock ：
- 44,882
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 300MHz
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 15nA
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 200
- Max Power Dissipation :
- 300mW
- Weight :
- 7.994566mg
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Max Collector Current :
- 100mA
- Base Part Number :
- BC846
- Factory Lead Time :
- 15 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Published :
- 2011
- Max Junction Temperature (Tj) :
- 150°C
- Width :
- 1.4mm
- Lead Free :
- Lead Free
- Height :
- 1.1mm
- Element Configuration :
- Single
- Frequency :
- 300MHz
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Length :
- 3.05mm
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Transition Frequency :
- 300MHz
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 65V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 65V
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Saturation Voltage :
- 200mV
- Power Dissipation :
- 310mW
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 65V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- -65°C~150°C TJ
- Additional Feature :
- High Reliability
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Datasheets
- BC846A
BC846A Documents
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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