BC846A
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- Mfr.Part #
- BC846A
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 44,882
- In Stock ：
- 44,882
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- BC846
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 65V
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Element Material :
- SILICON
- Length :
- 3.05mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Operating Temperature :
- -65°C~150°C TJ
- Number of Terminations :
- 3
- Transition Frequency :
- 300MHz
- hFE Min :
- 200
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Max Collector Current :
- 100mA
- Transistor Type :
- NPN
- Frequency :
- 300MHz
- Max Breakdown Voltage :
- 65V
- Height :
- 1.1mm
- Additional Feature :
- High Reliability
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 15 Weeks
- Max Power Dissipation :
- 300mW
- Collector Base Voltage (VCBO) :
- 80V
- Published :
- 2011
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 200mV
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 15nA
- Power Dissipation :
- 310mW
- Max Junction Temperature (Tj) :
- 150°C
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 65V
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 300MHz
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 7.994566mg
- Width :
- 1.4mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- BC846A
BC846A Documents
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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