BC846A
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- Mfr.Part #
- BC846A
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 44,882
- In Stock ：
- 44,882
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Width :
- 1.4mm
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 65V
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 300MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 300MHz
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Operating Temperature :
- -65°C~150°C TJ
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 15nA
- Collector Base Voltage (VCBO) :
- 80V
- Emitter Base Voltage (VEBO) :
- 6V
- Weight :
- 7.994566mg
- Pin Count :
- 3
- Max Junction Temperature (Tj) :
- 150°C
- Additional Feature :
- High Reliability
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 65V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Length :
- 3.05mm
- Max Power Dissipation :
- 300mW
- Collector Emitter Saturation Voltage :
- 200mV
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Published :
- 2011
- Height :
- 1.1mm
- Factory Lead Time :
- 15 Weeks
- Power Dissipation :
- 310mW
- Contact Plating :
- Tin
- Max Collector Current :
- 100mA
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- hFE Min :
- 200
- Frequency :
- 300MHz
- Number of Terminations :
- 3
- Base Part Number :
- BC846
- Collector Emitter Voltage (VCEO) :
- 65V
- Datasheets
- BC846A
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC846A-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC846A-7-F Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
BC846A-7-F Applications
There are a lot of Diodes Incorporated
BC846A-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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